Self-assembled monolayer modification of indium tin oxide anode surface for polymer light-emitting diodes with poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] for high performance

被引：45
作者：
Hsiao, CC [1 ]
Chang, CH [1 ]
Hung, MC [1 ]
Yang, NJ [1 ]
Chen, SA [1 ]
机构：
[1] Natl Tsing Hua Univ, Dept Chem Engn, Hsinchu 30043, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 22期
关键词：
D O I：
10.1063/1.1942644
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate that introducing a self-assembled monolayer (SAM) derived from 1,1,1,3,3,3-hexamethyldisilazane on an indium tin oxide (ITO) anode surface for the device (ITO/SAM/poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene]/Ca/Al), can lead to an improvement in maximum device efficiency from 2.0 to 3.9 cd/A and maximum brightness from 33 000 to 34 400 cd/m(2). Such improvement is even better than that with introducing a layer of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (2.6 cd/A and 16 000 cd/m(2)), which is usually used as a hole transport (or injection) layer. The improvement results from a hole blocking effect and better wetting by converting the ITO surface from hydrophilic to hydrophobic provided by the SAM. (c) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
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