Modification of Chemically Amplified Resists by Radical Copolymerization

被引：0
|
作者：
Bulgakova, S. [1 ]
Johns, M. [1 ]
Kiseleva, E. [1 ]
机构：
[1] NI Lobachevsky State Univ Nizhny Novgorod, Inst Chem Res, Nizhnii Novgorod 603950, Russia
来源：
MODERN TRENDS IN POLYMER SCIENCE-EPF 09 | 2010年 / 296卷
关键词：
chemically amplified resists; image type inversion; methacrylic monomers; radical copolymerization;
D O I：
10.1002/masy.201051019
中图分类号：
O63 [高分子化学（高聚物）];
学科分类号：
070305 ; 080501 ; 081704 ;
摘要：
Modification of a phenolic resist has been carried out by copolymerization with methacrylic monomers. Influence of irradiation source and its intensity has been studied by analyzing sensitive curves of a various resist composition. Inversion of imaging type at varying post exposure bake temperature has been investigated for resists based on copolymers containing methacrylic acid units, which has been related with crosslinking of macromolecules.
引用
收藏
页码：127 / 132
页数：6
相关论文
共 50 条
  • [41] Comparison of simulation approaches for chemically amplified resists
    Erdmann, A
    Henke, W
    Robertson, S
    Richter, E
    Tollkühn, B
    Hoppe, W
    LITHOGRAPHY FOR SEMICONDUCTOR MANUFACTURING II, 2001, 4404 : 99 - 110
  • [42] Accelerated Diffusion Following Deprotection in Chemically Amplified Resists
    Bottoms, Christopher M.
    Stein, Gila E.
    Doxastakis, Manolis
    JOURNAL OF PHYSICAL CHEMISTRY B, 2022, 126 (34): : 6562 - 6574
  • [43] Effects of plasticizing additives in ArF chemically amplified resists
    Yoshino, H
    Nakata, T
    Yamana, M
    Takimoto, M
    Hashimoto, T
    NEC RESEARCH & DEVELOPMENT, 2001, 42 (01): : 32 - 36
  • [44] Co and terpolymer reactivity ratios of chemically amplified resists
    Pujari, Narahari S.
    Wang, Mingxing
    Gonsalves, Kenneth E.
    POLYMER, 2017, 118 : 201 - 214
  • [45] Acid and base diffusion in chemically amplified DUV resists
    Itani, T
    Yoshino, H
    Hashimoto, S
    Yamana, M
    Samoto, N
    Kasama, K
    MICROELECTRONIC ENGINEERING, 1997, 35 (1-4) : 149 - 152
  • [46] Polymer design for 157 nm chemically amplified resists
    Ito, H
    Wallraff, GM
    Brock, P
    Fender, N
    Truong, H
    Breyta, G
    Miller, DC
    Sherwood, MH
    Allen, RD
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVIII, PTS 1 AND 2, 2001, 4345 : 273 - 284
  • [47] Lithographic effects of acid diffusion in chemically amplified resists
    Mack, CA
    MICROELECTRONICS TECHNOLOGY: POLYMERS FOR ADVANCED IMAGING AND PACKAGING, 1995, 614 : 56 - 68
  • [48] Effects of plasticizing additives in ArF chemically amplified resists
    Yoshino, H.
    Nakata, T.
    Yamana, M.
    Takimoto, M.
    Hashimoto, T.
    NEC Research and Development, 2001, 42 (01): : 32 - 36
  • [49] Proton dynamics in chemically amplified electron beam resists
    Yamamoto, H
    Kozawa, T
    Nakano, A
    Okamoto, K
    Yamamoto, Y
    Ando, T
    Sato, M
    Komano, H
    Tagawa, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (7A): : L848 - L850
  • [50] The effect of humidity on deprotection kinetics in chemically amplified resists
    Burns, SD
    Medeiros, DR
    Johnson, HF
    Wallraff, GM
    Hinsberg, WD
    Willson, CG
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIX, PTS 1 AND 2, 2002, 4690 : 321 - 331
12345