Fe-implanted InGaAs photoconductive terahertz detectors triggered by 1.56 μm femtosecond optical pulses -: art. no. 163504

Performance of InGaAs photoconductive antennas at an excitation wavelength of 1.56 μ m has been studied as a terahertz (THz) detector. THz waves in time domain are successfully detected, triggered with 1.56 μ m femtosecond optical pulses, owing to Fe implantation and annealing at 400 and 580 ° C. The peak amplitudes of the THz detected waves by the as-implanted and the low-temperature-annealed detectors saturate with increasing the excitation power. The thermal annealing affects both the frequency component and the amplitude of the THz detected waveforms. In particular, annealing at 580 ° C induces twice the increase in the amplitude of the signals. © 2005 American Institute of Physics.