Double resurf technology for HVICs

被引：28

作者：

DeSouza, MM

Narayanan, EMS

机构：

[1] Emerging Technol. Research Centre, De Montfort University, Leicester LE1 9BH, The Gateway

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 12期

关键词：

integrated circuits; power integrated circuits;

D O I：

10.1049/el:19960731

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A double resurf high voltage IC technology using a linearly varying doped (LVD) p(-) layer al the surface of a lateral power device is proposed. Detailed numerical simulations indicate enhancement in the performance of a lateral double diffused MOSFET (LDMOS) incorporating an LVD p(-) layer in comparison to a uniform p(-) layer. Moreover, this technique is found to very effective as an interconnection technology.

引用

页码：1092 / 1093

页数：2

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