Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy

被引：216

作者：

Noborisaka, J

Motohisa, J

Fukui, T

机构：

[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 0608628, Japan

[2] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 21期

基金：

日本学术振兴会;

关键词：

D O I：

10.1063/1.1935038

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the fabrication of GaAs hexagonal nanowires surrounded by {110} vertical facets on a GaAs (111) B substrate using selective-area (SA) metalorganic vapor-phase epitaxial (MOVPE) growth. The substrate for SA growth was partially covered with thin SiO2, and a circular mask opening with a diameter d(0) of 50-200 nm was defined. After SA-MOVPE, GaAs nanowires with a typical diameter d ranging from 50 to 200 nm and a height from 2 to 9 μ m were formed vertically on the substrate without any catalysts. The size of the nanowire depends on the growth conditions and the opening size of the masked substrate. A possible growth mechanism is also discussed. © 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 18 条

[1] InGaAs nano-pillar array formation on partially masked InP(III)B by selective area metal-organic vapour phase epitaxial growth for two-dimensional photonic crystal application [J].