A unified charge model for symmetric double-gate and surrounding-gate MOSFETs

被引：23
|
作者：
Lu, Huaxin [1 ]
Yu, Bo [1 ]
Taur, Yuan [1 ]
机构：
[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92037 USA
来源：
SOLID-STATE ELECTRONICS | 2008年 / 52卷 / 01期
关键词：
double-gate MOSFET; surrounding-gate MOSFET; analytical potential model; unified charge model; compact modeling;
D O I：
10.1016/j.sse.2007.06.018
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a unified analytical charge model for long channel symmetric double-gate (DG) and surrounding-gate (SGT) MOSFETs. The proposed analytical charge model continuously covers all the operation regions and achieves both computation efficiency and high accuracy. Unified intrinsic capacitance model for both DG and SGT MOSFETs is also presented for AC simulation. A detailed comparison between the analytical model and numerical solution is conducted to demonstrate the accuracy of the model. (C) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：67 / 72
页数：6
相关论文
共 50 条
  • [21] Compact model for short channel symmetric doped double-gate MOSFETs
    Cerdeira, Antonio
    Iniguez, Benjamin
    Estrada, Magali
    SOLID-STATE ELECTRONICS, 2008, 52 (07) : 1064 - 1070
  • [22] Explicit model for the gate tunneling current in double-gate MOSFETs
    Chaves, Ferney
    Jimenez, David
    Sune, Jordi
    SOLID-STATE ELECTRONICS, 2012, 68 : 93 - 97
  • [23] A Charge-Based Compact Model for Arbitrary Doped Cylindrical Surrounding-Gate MOSFETs
    Liu, Feilong
    Zhang, Jian
    He, Frank
    Liu, Feng
    Zhang, Lining
    Chan, Mansun
    EDSSC: 2008 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, 2008, : 89 - +
  • [24] Analytical charge and capacitance models of undoped cylindrical surrounding-gate MOSFETs
    Moldovan, Oana
    Iniguez, Benjamin
    Jimenez, David
    Roig, Jaume
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (01) : 162 - 165
  • [25] An analytical model for terahertz detection in cylindrical surrounding-gate MOSFETs
    Ma, Guangjin
    Li, Chunlai
    Ma, Xiaojuan
    Zhou, Zhiping
    He, Jin
    AIP ADVANCES, 2018, 8 (07):
  • [26] An Analytical Threshold Voltage Model of Strained Surrounding-gate MOSFETs
    Liu, Yao
    Li, Zunchao
    2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012), 2012, : 25 - 27
  • [27] A new analytical model for junctionless cylindrical surrounding-gate MOSFETs
    Li, Cong
    Zhuang, Yiqi
    Wang, Ping
    Jiang, Zhi
    Zhang, Li
    2014 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2014,
  • [28] Symmetrical unified compact model of short-channel double-gate MOSFETs
    Papathanasiou, K.
    Theodorou, C. G.
    Tsormpatzoglou, A.
    Tassis, D. H.
    Dimitriadis, C. A.
    Bucher, M.
    Ghibaudo, G.
    SOLID-STATE ELECTRONICS, 2012, 69 : 55 - 61
  • [29] Unified Quantum and Reliability Model for Ultra-Thin Double-Gate MOSFETs
    Rana Y. ElKashlan
    Omnia Samy
    Azza Anis
    Yehea Ismail
    Hamdy Abdelhamid
    Silicon, 2020, 12 : 21 - 28
  • [30] Analytic Model for Undoped Symmetric Double-Gate MOSFETs With Small Gate-Oxide-Thickness Asymmetry
    Chang, Sheng
    Wang, Gaofeng
    Huang, Qijun
    Wang, Hao
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (10) : 2297 - 2301
12345