A unified charge model for symmetric double-gate and surrounding-gate MOSFETs

被引：23

作者：

Lu, Huaxin ^{[1
]}

Yu, Bo ^{[1
]}

Taur, Yuan ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92037 USA

来源：

SOLID-STATE ELECTRONICS | 2008年 / 52卷 / 01期

关键词：

double-gate MOSFET; surrounding-gate MOSFET; analytical potential model; unified charge model; compact modeling;

D O I：

10.1016/j.sse.2007.06.018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a unified analytical charge model for long channel symmetric double-gate (DG) and surrounding-gate (SGT) MOSFETs. The proposed analytical charge model continuously covers all the operation regions and achieves both computation efficiency and high accuracy. Unified intrinsic capacitance model for both DG and SGT MOSFETs is also presented for AC simulation. A detailed comparison between the analytical model and numerical solution is conducted to demonstrate the accuracy of the model. (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：67 / 72

页数：6

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