Influences of arc current on composition and properties of MgO thin films prepared by cathodic vacuum arc deposition

被引:2
|
作者
Zhu, Daoyun [1 ,2 ]
Zheng, Changxi [2 ]
Wang, Mingdong [2 ]
Liu, Yi [2 ]
Chen, Dihu [2 ]
He, Zhenhui [2 ]
Wen, Lishi [2 ]
Cheung, W. Y. [3 ,4 ]
机构
[1] Guangdong Univ Technol, Expt Teaching Dept, 100 Waihuanxi Rd, Guangzhou 510006, Guangdong, Peoples R China
[2] Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
[3] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, Hong Kong, Peoples R China
[4] Chinese Univ Hong Kong, Mat Technol Res Ctr, Shatin, Hong Kong, Peoples R China
关键词
MgO thin films; Vacuum arc deposition; Arc current; PROTECTIVE LAYER; MECHANISM; VOLTAGE; ENERGY;
D O I
10.1016/j.matchemphys.2010.08.049
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
MgO thin films with high optical transmittances (more than 90%) were prepared by cathodic vacuum arc deposition technique With the increase of arc current from 40 to 80 A the deposition pressure decreases and the film thickness Increases the atomic ratio of Mg/O in MgO thin films (obtained by RBS) increases from 097 to 117 giving that deposited at 50 A most close to the stoichiometric composition of the bulk MgO the grains of MgO thin films grow gradually as shown in SEM Images XRD patterns show that MgO (1 1 0) orientation is predominant for films prepared at the arc currents ranged from 50 to 70 A The MgO (1 0 0) orientation is much enhanced and comparable to that of MgO (1 1 0) for films prepared at the arc current of 80 A The secondary electron emission coefficient of MgO thin film Increases with arc current ranged from 50 to 70 A (C) 2010 Elsevier B V All rights reserved
引用
收藏
页码:1146 / 1150
页数:5
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