Tuning charge transport from unipolar (n-type) to ambipolar in bis(naphthalene diimide) derivatives by introducing π-conjugated heterocyclic bridging moieties

被引:28
|
作者
Wang, Zongrui [1 ,2 ]
Li, Xiangguang [1 ]
Zou, Ye [1 ]
Tan, Jiahui [1 ]
Fu, Xiaolong [1 ,2 ]
Liu, Jie [1 ,3 ,4 ]
Xiao, Chengyi [1 ,2 ]
Dong, Huanli [1 ,5 ]
Jiang, Wei [1 ]
Liu, Feng [6 ,7 ]
Zhen, Yonggang [1 ]
Wang, Zhaohui [1 ]
Russell, Thomas P. [6 ,7 ]
Hu, Wenping [1 ,3 ,4 ]
机构
[1] Chinese Acad Sci, Beijing Natl Lab Mol Sci, Organ Solids Lab, Inst Chem, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Tianjin Univ, Key Lab Mol Optoelect Sci, Sch Sci, Tianjin 300072, Peoples R China
[4] Collaborat Innovat Ctr Chem Sci & Engn, Tianjin 300072, Peoples R China
[5] Capital Normal Univ, Dept Chem, Beijing 100048, Peoples R China
[6] Univ Massachusetts, Dept Polymer Sci & Engn, Amherst, MA 01003 USA
[7] Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
基金
中国国家自然科学基金;
关键词
FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; ACTIVE-MATRIX DISPLAYS; HIGH-PERFORMANCE; ORGANIC SEMICONDUCTORS; POLYMER SEMICONDUCTORS; NAPHTHALENE DIIMIDES; ELECTRON MOBILITIES; AMORPHOUS-SILICON; RYLENE ARRAYS;
D O I
10.1039/c6tc01769j
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A series of acceptor-donor-acceptor (A-D-A) conjugated molecules based on naphthalene diimide dimers bridged with different pi-conjugated heterocyclic units (NDI-pi-NDI) have been designed and synthesized. By an ingenious design strategy, the LUMO (the lowest unoccupied molecular orbital) of the NDI-based small molecules is well controlled to a relatively constant value of -3.8 to -3.9 eV, whereas their HOMO (the highest occupied molecular orbital) could be tuned over a wide range, from -6.5 eV (compound 1) to -5.5 eV (compound 5), leading to varied band gaps from 2.6 eV to 1.5 eV. Organic field-effect transistor (OFET) characterization of these NDI-pi-NDI molecules shows that compounds 1, 2, and 3 have good n-type semiconducting properties in a N-2 atmosphere with the maximum electron mobilities up to 0.15 cm(2) V-1 s(-1), 0.46 cm(2) V-1 s(-1) and 0.57 cm(2) V-1 s(-1), respectively. Compounds 4 and 5, due to the high-lying HOMO levels and reduced energy band gaps, have ambipolar semiconducting properties and OFETs based on 5 show the highest electron and hole mobilities up to 1.23 cm(2) V-1 s(-1) and 0.0074 cm(2) V-1 s(-1), respectively. Moreover, the performances are enhanced under thermal treatment because of the increased crystallinity as evidenced by X-ray diffraction (XRD) and atomic force microscopy (AFM). The easily tunable electronic energy levels make the NDI-based semiconductors promising n-channel and ambipolar components in organic devices.
引用
收藏
页码:7230 / 7240
页数:11
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