Ex situ Sn diffusion: a well-suited technique for enhancing the photovoltaic properties of a SnS absorber layer

被引：18

作者：

Sajeesh, T. H. ^{[1
]}

Kartha, C. Sudha ^{[1
]}

Sanjeeviraja, C. ^{[2
]}

Abe, T. ^{[3
]}

Kashiwaba, Y. ^{[3
]}

Vijayakumar, K. P. ^{[1
]}

机构：

[1] Cochin Univ Sci & Technol, Dept Phys, Cochin 682022, Kerala, India

[2] Alagappa Univ, Sch Phys, Karaikkudi 630003, Tamil Nadu, India

[3] Iwate Univ, Dept Elect & Elect Engn, Morioka, Iwate 0208551, Japan

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2010年 / 43卷 / 44期

关键词：

THIN-FILMS; ENERGY; PHOTOCONDUCTIVITY; OPTIMIZATION;

D O I：

10.1088/0022-3727/43/44/445102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sn atoms were thermally diffused into tin (II) sulfide (SnS) films prepared using chemical spray pyrolysis. This was achieved by depositing a layer of Sn metal over SnS films followed by annealing of the Sn/SnS bilayer films at 100 degrees C in high vacuum for 30 min. There was no contamination due to the formation of additional phases of Sn compounds up to a very high percentage of Sn diffusion. Contamination due to Sn-O-S phase was removed by Sn diffusion. The samples were optimized to achieve higher photosensitivity and low resistivity. All these enhanced properties were obtained without altering the optimum band gap of the SnS film which is suitable for maximum photovoltaic conversion efficiency.

引用

页数：6

共 28 条

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