Current conduction mechanism of Pt/GaN and Pt/Al0.35Ga0.65N Schottky diodes

被引：22
|
作者：
Kim, JK [1 ]
Jang, HW [1 ]
Lee, JL [1 ]
机构：
[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, Kyungbuk, South Korea
来源：
JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 11期
关键词：
D O I：
10.1063/1.1625101
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electrical properties of Pt/AlxGa1-xN Schottky diodes and chemical bonding states of AlxGa1-xN surface were examined simultaneously to investigate the change in the current transport mechanisms of the Pt/AlxGa1-xN diodes with increasing Al mole fraction. The Pt/GaN diodes showed electrical properties given by the thermionic-emission theory, while the Pt/Al0.35Ga0.65N showed a nonideal Schottky behavior. The oxygen donors were predominantly incorporated at the surface of AlxGa1-xN with increasing Al mole fraction, causing the surface to be heavily doped n type. Consequently, the current transport in the Pt/Al0.35Ga0.65N diodes was dominated by the field emission of electrons through the Schottky barrier, leading to the nonideal Schottky behavior. (C) 2003 American Institute of Physics.
引用
收藏
页码：7201 / 7205
页数：5
相关论文
共 50 条
  • [21] Electrical parameters of Au/n-GaN and Pt/n-GaN Schottky diodes
    Kadaoui, Mustapha Amine
    Bouiadjra, Wadi Bachir
    Saidane, Abdelkader
    Belahsene, Sofiane
    Ramdane, Abderrahim
    SUPERLATTICES AND MICROSTRUCTURES, 2015, 82 : 269 - 286
  • [22] Interface phonon modes in the [AlN/GaN]20 and [Al0.35Ga0.65N/Al0.55Ga0.45N]20 2D multi-quantum well structures
    Sivadasan, A. K.
    Singha, Chirantan
    Bhattacharyya, A.
    Dhara, Sandip
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2016, 18 (43) : 29864 - 29870
  • [23] Different strain relief behaviors in Al0.35Ga0.65N/GaN multiple quantum wells on GaN/Sapphire templates with AlN/GaN supperlattices and low-temperature AlN interlayers
    Huang, C. C.
    Xu, F. J.
    Song, J.
    Xu, Z. Y.
    Wang, J. M.
    Zhu, R.
    Chen, G.
    Wang, X. Q.
    Yang, Z. J.
    Shen, B.
    Chen, X. S.
    Lu, W.
    JOURNAL OF APPLIED PHYSICS, 2012, 111 (01)
  • [24] Pt/GaN Schottky diodes for hydrogen gas sensors
    Ali, M
    Cimalla, V
    Lebedev, V
    Romanus, H
    Tilak, V
    Merfeld, D
    Sandvik, P
    Ambacher, O
    SENSORS AND ACTUATORS B-CHEMICAL, 2006, 113 (02) : 797 - 804
  • [25] A study of the interface and the related electronic properties in n-Al0.35Ga0.65N/GaN heterostructure
    Zhang, QL
    Wang, DJ
    Wei, X
    Xie, TF
    Li, ZH
    Lin, YH
    Yang, M
    THIN SOLID FILMS, 2005, 491 (1-2) : 242 - 248
  • [26] High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN
    Wang, L
    Nathan, MI
    Lim, TH
    Khan, MA
    Chen, Q
    APPLIED PHYSICS LETTERS, 1996, 68 (09) : 1267 - 1269
  • [27] Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers
    Chenguang He
    Zhixin Qin
    Fujun Xu
    Mengjun Hou
    Shan Zhang
    Lisheng Zhang
    Xinqiang Wang
    Weikun Ge
    Bo Shen
    Scientific Reports, 5
  • [28] Effect of intermediated layers in Al0.65Ga0.35N/GaN multiple quantum wells
    Kaneko, L
    Iizuka, N
    Suzuki, N
    PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 129 - 132
  • [29] Studies on the Thermal Stability of Ni/n-GaN and Pt/n-GaN Schottky Barrier Diodes
    Kumar, Ashish
    Mahajan, Somna
    Vinayak, Seema
    Singh, R.
    MATERIALS RESEARCH EXPRESS, 2016, 3 (08):
  • [30] Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers
    He, Chenguang
    Qin, Zhixin
    Xu, Fujun
    Hou, Mengjun
    Zhang, Shan
    Zhang, Lisheng
    Wang, Xinqiang
    Ge, Weikun
    Shen, Bo
    SCIENTIFIC REPORTS, 2015, 5
12345