Current conduction mechanism of Pt/GaN and Pt/Al0.35Ga0.65N Schottky diodes

被引：22
|
作者：
Kim, JK [1 ]
Jang, HW [1 ]
Lee, JL [1 ]
机构：
[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, Kyungbuk, South Korea
来源：
JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 11期
关键词：
D O I：
10.1063/1.1625101
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electrical properties of Pt/AlxGa1-xN Schottky diodes and chemical bonding states of AlxGa1-xN surface were examined simultaneously to investigate the change in the current transport mechanisms of the Pt/AlxGa1-xN diodes with increasing Al mole fraction. The Pt/GaN diodes showed electrical properties given by the thermionic-emission theory, while the Pt/Al0.35Ga0.65N showed a nonideal Schottky behavior. The oxygen donors were predominantly incorporated at the surface of AlxGa1-xN with increasing Al mole fraction, causing the surface to be heavily doped n type. Consequently, the current transport in the Pt/Al0.35Ga0.65N diodes was dominated by the field emission of electrons through the Schottky barrier, leading to the nonideal Schottky behavior. (C) 2003 American Institute of Physics.
引用
收藏
页码：7201 / 7205
页数：5
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