Modeling indium diffusion in germanium by connecting point defect parameters with bulk properties

被引：15

作者：

Chroneos, A. ^{[1
,2
]}

Vovk, R. V. ^{[3
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England

[2] Coventry Univ, Fac Engn & Comp, Coventry CV1 5FB, W Midlands, England

[3] V Karazin Kharkiv Natl Univ, Dept Phys, UA-61077 Kharkov, Ukraine

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2015年 / 26卷 / 04期

关键词：

SELF-DIFFUSION; FORMATION VOLUME; IMPURITY DIFFUSION; ACTIVATION-ENERGY; IONIC-CRYSTALS; TEMPERATURE; PRESSURE; GE; MIGRATION; VACANCIES;

D O I：

10.1007/s10854-014-2655-y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Indium is a p-type dopant that can be considered for p-channel germanium metal oxide semiconductor field effect transistors. As such understanding its diffusion properties over a range of temperatures and pressures is technologically important. This can be realized in the cBa"broken vertical bar model in which the defect Gibbs energy is proportional to the isothermal bulk modulus (B) and the mean volume per atom (a"broken vertical bar). In the present study elastic and expansivity data is used in the framework of the cBa"broken vertical bar model to derive the indium diffusion coefficient in germanium in the temperature range 827-1,176 K. The calculated results are in excellent agreement with the available experimental data.

引用

页码：2113 / 2116

页数：4

共 46 条

[1] [Anonymous], 1986, Thermodynamics of point defects and the relation with bulk properties
[2] Diffusion of n-type dopants in germanium
Chroneos, A.
Bracht, H.
[J]. APPLIED PHYSICS REVIEWS, 2014, 1 (01):
[3] Defect engineering strategies for germanium
Chroneos, A.
[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2013, 24 (06) : 1741 - 1747
[4] Defect configurations of high-k cations in germanium
Chroneos, A.
Dimoulas, A.
[J]. JOURNAL OF APPLIED PHYSICS, 2012, 111 (02)
[5] Effect of germanium substrate loss and nitrogen on dopant diffusion in germanium
Chroneos, A.
[J]. JOURNAL OF APPLIED PHYSICS, 2009, 105 (05)
[6] Diffusion and defect reactions between donors, C, and vacancies in Ge. II. Atomistic calculations of related complexes
Chroneos, A.
Grimes, R. W.
Uberuaga, B. P.
Bracht, H.
[J]. PHYSICAL REVIEW B, 2008, 77 (23):
[7] Vacancy-mediated dopant diffusion activation enthalpies for germanium
Chroneos, A.
Bracht, H.
Grimes, R. W.
Uberuaga, B. P.
[J]. APPLIED PHYSICS LETTERS, 2008, 92 (17)
[8] Phosphorous clustering in germanium-rich silicon germanium
Chroneos, A.
Bracht, H.
Grimes, R. W.
Uberuaga, B. R.
[J]. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2008, 154 : 72 - 75
[9] Impurity diffusion, point defect engineering, and surface/interface passivation in germanium
Chroneos, Alexander
Schwingenschloegl, Udo
Dimoulas, Athanasios
[J]. ANNALEN DER PHYSIK, 2012, 524 (3-4) : 123 - 132
[10] Interrelation of the equation of state of MgO and self diffusion coefficients
Dologlou, Elisabeth
[J]. JOURNAL OF APPLIED PHYSICS, 2011, 110 (03)

← 1 2 3 4 5 →