A New 65nm-CMOS 1V 8GS/s 9-bit Differential Voltage-Controlled Delay Unit Utilized for a Time-Based Analog-to-Digital Converter Circuit

被引:0
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作者
El-Bayoumi, Abdullah [1 ,2 ]
Mostafa, Hassan [2 ,3 ,4 ]
Soliman, Ahmed M. [2 ]
机构
[1] Valeo InterBranch Automot Software, Cairo Alex Rd, Giza, Egypt
[2] Cairo Univ, Elect & Elect Commun Engn Dept, Giza, Egypt
[3] AUC, Ctr Nanoelect & Devices, New Cairo, Egypt
[4] Zewail City Sci & Technol, New Cairo, Egypt
关键词
Nanometer CMOS technology; voltage-controlled delay unit; time based analog-to-digital converter; software defined radio; metal-insulator-metal capacitor; effective-number-of-bits; linearity; NM CMOS; ADC; DB;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new differential Voltage-Controlled Delay Unit (VCDU) is proposed. The VCDU converts an input voltage into a pulse delay, and delivers it to a Time-to-Digital Converter (TDC) which outputs a digital word. Both circuits form a Time-Based Analog-to-Digital Converter (ADC). In scaled CMOS technology, the Time-Based ADC is a substantial block in designing Software Defined Radio (SDR) receivers, as it exhibits high speed and low power. The new manually-calibrated differential VCDU circuit operates on a high sampling frequency of 8GS/s in 65nm CMOS technology, with a supply voltage of 1V. It achieves a wide dynamic-range of 0.56V at a 3% linearity error and effective-number-of-bits (ENOB) of 8.9 bits. Additionally, it consumes an area of 742 mu m(2) and a power consumption of 1.6mW. A metal-insulator-metal capacitor is used to minimize the process-voltage-temperature variations. The simulation results are compared to single-ended VCDU results and to state-of-the-art analog-part ADCs results to show the strength of the proposed design.
引用
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页码:158 / 161
页数:4
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