Polycrystalline Silicon Thin-Film Transistor Using Xe Flash-Lamp Annealing

被引：19
|
作者：
Saxena, Saurabh [1 ]
Kim, Dong Cheol [2 ]
Park, Jeang Hun [2 ]
Jang, Jin [1 ]
机构：
[1] Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South Korea
[2] NanoFab Ctr, Varied Innovat Technol, Gyeonggi Do 443270, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 11期
关键词：
Crystallization; excimer-laser annealing (ELA); Flash-lamp annealing (FLA); low-temperature polycrystalline silicon (poly-Si) (LTPS); thin-film transistors (TFTs); AMORPHOUS-SILICON; SI FILMS; CRYSTALLIZATION; GLASS;
D O I：
10.1109/LED.2010.2064282
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report a high-performance thin-film transistor (TFT) using polycrystalline silicon (poly-Si) by short-pulse Flash-lamp annealing of amorphous silicon. Large grains of average size of similar to 15 mu m with wide branchlike grain boundaries were found in the poly-Si, and there was no amorphous phase inside. The fabricated p-channel poly-Si TFT on the grain exhibited field-effect mobility of 138 cm(2)/V . sec, a threshold voltage of-1.3 V, and an on/off current ratio of 10(8).
引用
收藏
页码：1242 / 1244
页数：3
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