Polycrystalline Silicon Thin-Film Transistor Using Xe Flash-Lamp Annealing

被引：19

作者：

Saxena, Saurabh ^{[1
]}

Kim, Dong Cheol ^{[2
]}

Park, Jeang Hun ^{[2
]}

Jang, Jin ^{[1
]}

机构：

[1] Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South Korea

[2] NanoFab Ctr, Varied Innovat Technol, Gyeonggi Do 443270, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 11期

关键词：

Crystallization; excimer-laser annealing (ELA); Flash-lamp annealing (FLA); low-temperature polycrystalline silicon (poly-Si) (LTPS); thin-film transistors (TFTs); AMORPHOUS-SILICON; SI FILMS; CRYSTALLIZATION; GLASS;

D O I：

10.1109/LED.2010.2064282

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a high-performance thin-film transistor (TFT) using polycrystalline silicon (poly-Si) by short-pulse Flash-lamp annealing of amorphous silicon. Large grains of average size of similar to 15 mu m with wide branchlike grain boundaries were found in the poly-Si, and there was no amorphous phase inside. The fabricated p-channel poly-Si TFT on the grain exhibited field-effect mobility of 138 cm(2)/V . sec, a threshold voltage of-1.3 V, and an on/off current ratio of 10(8).

引用

页码：1242 / 1244

页数：3

共 50 条

[1] Protrusions of Super Grains Formed by Ultrashort Xe Flash-Lamp Annealing of Amorphous Silicon and Its Effect on the Performances of Thin-Film Transistors
Saxena, Saurabh
Jang, Jin
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (08) : 2638 - 2643
[2] Thin-film polycrystalline silicon solar cells formed by flash lamp annealing of a-Si films
Endo, Yohei
Fujiwara, Tomoko
Ohdaira, Keisuke
Nishizaki, Shogo
Nishioka, Kensuke
Matsumura, Hideki
THIN SOLID FILMS, 2010, 518 (17) : 5003 - 5006
[3] Selection of Material for the Back Electrodes of Thin-Film Solar Cells Using Polycrystalline Silicon Films Formed by Flash Lamp Annealing
Ohdaira, Keisuke
Fujiwara, Tomoko
Endo, Yohei
Shiba, Kazuhiro
Takemoto, Hiroyuki
Matsumura, Hideki
JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (04)
[4] Rapid Activation of Phosphorous-Implanted Polycrystalline Si Thin Films on Glass Substrates Using Flash-Lamp Annealing
Choi, Jeong-Wan
Jin, Weon-Bum
Bae, Seung-Muk
You, Yil-Hwan
Kim, Hyoung-June
Kim, Byeong-Kook
Kwon, Yongwoo
Park, Seungho
Hwang, Jin-Ha
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2014, 3 (11) : P391 - P395
[5] Self-Heating of Laterally Grown Polycrystalline Silicon Thin-Film Transistor
Watanabe, Kazunori
Asano, Tanemasa
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (03)
[6] Ultrasonic spray coating and flash lamp annealing of silicon nanoparticle dispersions for silicon thin film formation
Buechter, Benjamin
Seidel, Falko
Fritzsche, Ronny
Toader, Iulia
Buschbeck, Roy
Jakob, Alexander
Schulze, Steffen
Freitag, Hans
Lang, Heinrich
Hietschold, Michael
Zahn, Dietrich R. T.
Mehring, Michael
JOURNAL OF MATERIALS SCIENCE, 2014, 49 (23) : 7979 - 7990
[7] Impact of Underwater Laser Annealing on Polycrystalline Silicon Thin-Film Transistor for Inactivation of Electrical Defects at Super Low Temperature
Machida, Emi
Horita, Masahiro
Yamasaki, Koji
Ishikawa, Yasuaki
Uraoka, Yukiharu
Ikenoue, Hiroshi
JOURNAL OF DISPLAY TECHNOLOGY, 2013, 9 (09): : 741 - 746
[8] Thermal warpage of a glass substrate during Xe-arc flash lamp crystallization of amorphous silicon thin-film
Jin, Won-Beom
Park, Yeonsoo
Kim, Byung-Kuk
Kim, Hyoung June
Hwang, Jin-Ha
Chung, Haseung
Park, Jong Hyeon
Kim, Dong Hyun
Park, Seungho
INTERNATIONAL JOURNAL OF THERMAL SCIENCES, 2014, 83 : 25 - 32
[9] A Novel Agglomerated-Silicon Thin-Film Transistor
Afentakis, Themistokles
Sposili, Robert S.
Voutsas, Apostolos
IEEE ELECTRON DEVICE LETTERS, 2010, 31 (01) : 50 - 52
[10] Defect annealing processes for polycrystalline silicon thin-film solar cells
Steffens, S.
Becker, C.
Zollondz, J. -H.
Chowdhury, A.
Slaoui, A.
Lindekugel, S.
Schubert, U.
Evans, R.
Rech, B.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2013, 178 (09): : 670 - 675

← 1 2 3 4 5 →