A 1.2-V 10-μW NPN-Based Temperature Sensor in 65-nm CMOS With an Inaccuracy of 0.2 °C (3σ) From -70 °C to 125 °C

被引：67

作者：

Sebastiano, Fabio ^{[1
]}

Breems, Lucien J. ^{[1
]}

Makinwa, Kofi A. A. ^{[2
]}

Drago, Salvatore ^{[1
]}

Leenaerts, Domine M. W. ^{[1
]}

Nauta, Bram ^{[3
]}

机构：

[1] NXP Semicond, Eindhoven, Netherlands

[2] Delft Univ Technol, Elect Instrumentat Lab, Delft, Netherlands

[3] Univ Twente, IC Design Grp, CTIT Res Inst, NL-7500 AE Enschede, Netherlands

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2010年 / 45卷 / 12期

关键词：

CMOS analog integrated circuits; sigma-delta modulation; smart sensors; temperature sensors; COMPENSATION;

D O I：

10.1109/JSSC.2010.2076610

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An NPN-based temperature sensor with digital output has been realized in a 65-nm CMOS process. It achieves a batch-calibrated inaccuracy of +/-0.5 degrees C (3 sigma) and a trimmed inaccuracy of +/-0.2 degrees C (3 sigma) over the temperature range from -70 degrees C to 125 degrees C. This performance is obtained by the use of NPN transistors as sensing elements, the use of dynamic techniques, i.e., correlated double sampling and dynamic element matching, and a single room-temperature trim. The sensor draws 8.3 mu A from a 1.2-V supply and occupies an area of 0.1 mm(2).

引用

页码：2591 / 2601

页数：11

共 15 条

[1] A CMOS smart temperature sensor with a 3σ inaccuracy of ±0.1°C from -55°C to 125°C
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[7] A 0.8-V BJT-Based Temperature Sensor With anInaccuracy of±0.4°C (3σ) From-40°C to125°C in 22-nm CMOS
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[8] A BJT-Based Temperature Sensor in 40-nm CMOS With ±0.8°C (3σ) Untrimmed Inaccuracy
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[9] An SOI thermal-diffusivity-based temperature sensor with ±0.6 °C (3σ) untrimmed inaccuracy from -70 °C to 225 °C
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