Enhanced air-cavity effect of periodically oriented embedded air protrusions for high-efficiency InGaN/GaN light-emitting diodes

被引：14

作者：

Kim, Hyung Gu ^{[1
]}

Kim, Hyun Kyu ^{[1
]}

Kim, Hee Yun ^{[1
]}

Jeong, Hyun ^{[1
]}

Chandramohan, S. ^{[1
]}

Uthirakumar, Periyayya ^{[1
]}

Jeong, Mun Seok ^{[2
]}

Lee, Jeong-Sik ^{[3
]}

Suh, Eun-Kyung ^{[1
]}

Hong, Chang-Hee ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Sch Semicond & Chem Engn, Chonju 561756, South Korea

[2] Gwangju Inst Sci & Technol, Adv Photon Res Inst, Kwangju 500712, South Korea

[3] LG Innotek, Adv Dev Lab, Seoul 137724, South Korea

来源：

OPTICS LETTERS | 2010年 / 35卷 / 18期

关键词：

D O I：

10.1364/OL.35.003012

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report on the development of periodically oriented embedded air protrusion (EAP) structures at the GaN-sapphire interface in InGaN/GaN LEDs. A specific SiO2 mask pattern and a simple wet etching process were utilized for the fabrication of EAP structures. A strong coupling between closely proximate air cavities and the multiple quantum wells promoted spontaneous emission due to the high-index contrast at the GaN-air interface. As a result, the light output power of the EAP LED was 2.2 times higher than that of a conventional LED at an injection current of 20 mA. (C) 2010 Optical Society of America

引用

页码：3012 / 3014

页数：3

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