Enhanced field emission of ZnO nanoneedle arrays via solution etching at room temperature

被引:17
|
作者
Ma, Huanming [1 ]
Qin, Zhiwei [1 ]
Wang, Zaide [1 ]
Ahmad, Mashkoor [2 ]
Sun, Hongyu [3 ]
机构
[1] CITIC Dicastal Wheel Mfg Co Ltd, Qinhuangdao 066011, Peoples R China
[2] Pakistan Inst Nucl Sci & Technol, Phys Div, Nanomat Res Grp, PO Nilore, Islamabad 44000, Pakistan
[3] Tech Univ Denmark, Dept Micro & Nanotechnol, DK-2800 Lyngby, Denmark
关键词
ZnO nanoneedle arrays; Crystal growth; Solution method; Field emission; NANOWIRE GROWTH; NANOSTRUCTURES;
D O I
10.1016/j.matlet.2017.07.014
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
ZnO nanoneedle arrays (ZnO nns) were synthesized by a facile two-step solution-phase method based on the etching of pre-synthesized ZnO nanowire arrays (ZnO nws) with flat ends at room temperature. Field emission measurement results showed that the turn-on electronic fields of ZnO nns and nws were 2.7 and 5.3 V mu m(-1) at a current density of 10 mu A cm(-2), and the field enhancement factors were 4939.3 for ZnO nns and 1423.6 for ZnO nws. The enhanced field emission properties in ZnO nns were ascribed to the sharp tip geometry. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:162 / 165
页数:4
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