Auger spectroscopy and the electronic structure of semiconductors

The results of a number of recent studies are used to assess the contribution that Auger spectroscopy can make to our understanding of the electronic structure of semiconductors. It is clear that we have a good understanding of the Auger profiles of the CVV transitions of Si and these spectra have been used to obtain information on the magnitude of on-site electron correlation in this material. Our understanding of the screening densities of states around core-ionised sites, as exemplified by the profiles of the KLV transitions of Si, is not yet complete and there is a need for further theoretical work. It is clear that the analysis of Auger parameter shifts can yield insight into differences in the charge transfer and electron screening of different atomic environments. We have a good model for the analysis of the contribution from charge transfer but there is a need to develop a more sophisticated treatment of electron screening. (C) 1998 Elsevier Science B.V. All rights reserved.