Boron induced recrystallization of amorphous silicon film by a rapid thermal process

被引：3

作者：

Chao, Ching-Hsun ^{[1
]}

Weng, Ko-Wei ^{[1
]}

Cheng, Horng-Long ^{[2
]}

Chan, Chien-Hung ^{[1
]}

Lien, Shui-Yang ^{[1
]}

机构：

[1] MingDao Univ, Dept Mat Sci & Engn, Changhua, Taiwan

[2] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 70101, Taiwan

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 24期

关键词：

Polycrystalline silicon; Amorphous silicon; Rapid thermal processing; CHEMICAL-VAPOR-DEPOSITION; POLY-SI TFTS; ALUMINUM-INDUCED CRYSTALLIZATION; DOPED POLYCRYSTALLINE SILICON; THIN-FILMS; LOW-TEMPERATURES; SOLAR-CELLS; PLASMA; PHASE; MICROCRYSTALLINE;

D O I：

10.1016/j.tsf.2010.05.028

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Rapid thermal process (RTP) is to induce boron-doped amorphous silicon into a high degree of crystallization of polycrystalline silicon in 5min. In addition to the short time characteristic, it also provides a relatively lower temperature route to prepare high percentage of polycrystalline silicon in comparison with solid phase crystallization method. Before RTP, boron is homogeneously doped into the amorphous silicon film by ion implantation technology. After rapid thermal processing, the grain size of the polycrystalline silicon was found about at 0.1-0.5 mu m. The degree crystallization of silicon is reached up to 99.1% with a good hole mobility of 138.6 cm(2)/Vs. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：7480 / 7482

页数：3

共 50 条

[41] Raman Study of Localized Recrystallization of Amorphous Silicon Induced by Laser Beam
Tabet, Nouar
Ai-Sayoud, Abduljabar
Said, Seyed
Yang, Xiaoming
Yang, Yang
Syed, A.
Diallo, Ei-Haj
Wang, Zhihong
Wang, Xianbin
Johlin, Eric
Simmons, Christine
Buonassisi, Tonio
2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2012,
[42] RAPID THERMAL-DIFFUSION OF BORON IMPLANTED AS BORON DIFLUORIDE IN PREAMORPHIZED SILICON
WALKER, AJ
JOURNAL OF APPLIED PHYSICS, 1992, 71 (04) : 2033 - 2035
[43] Post-growth rapid thermal annealing effect on hydrogenated amorphous silicon carbide thin film
Wang, YH
Lin, J
Huan, CHA
Feng, ZC
Chua, SJ
DIAMOND AND RELATED MATERIALS, 2001, 10 (3-7) : 1268 - 1272
[44] Depth-dependent recovery of thermal conductivity after recrystallization of amorphous silicon
Huynh, Kenny
Wang, Yekan
Liao, Michael E.
Pfeifer, Thomas
Tomko, John
Scott, Ethan
Hattar, Khalid
Hopkins, Patrick E.
Goorsky, Mark S.
JOURNAL OF APPLIED PHYSICS, 2023, 133 (13)
[45] Recrystallization of amorphous ion-implanted silicon carbide after thermal annealing
Miro, S.
Costantini, J. -M.
Sorieul, S.
Gosmain, L.
Thome, L.
PHILOSOPHICAL MAGAZINE LETTERS, 2012, 92 (11) : 633 - 639
[46] Transient recrystallization of amorphous silicon films
Viatella, J
Singh, RK
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 47 (01): : 78 - 86
[47] RECRYSTALLIZATION OF AMORPHOUS-SILICON ON INSULATOR
VELCHEV, NB
BESHKOV, GD
MATERIALS CHEMISTRY AND PHYSICS, 1993, 36 (1-2) : 139 - 141
[48] Boron-induced electronic states in hydrogenated amorphous silicon
Lin, SY
THIN SOLID FILMS, 1999, 343 : 285 - 287
[49] Boron-induced electronic states in hydrogenated amorphous silicon
Lin, Shu-Ya
Thin Solid Films, 1999, 343 : 285 - 287
[50] Laser induced melting and crystallization of boron doped amorphous silicon
Nebel, CE
Schoniger, S
Dahlheimer, B
Stutzmann, M
AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997, 1997, 467 : 421 - 426

← 1 2 3 4 5 →