Boron induced recrystallization of amorphous silicon film by a rapid thermal process

被引：3

作者：

Chao, Ching-Hsun ^{[1
]}

Weng, Ko-Wei ^{[1
]}

Cheng, Horng-Long ^{[2
]}

Chan, Chien-Hung ^{[1
]}

Lien, Shui-Yang ^{[1
]}

机构：

[1] MingDao Univ, Dept Mat Sci & Engn, Changhua, Taiwan

[2] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 70101, Taiwan

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 24期

关键词：

Polycrystalline silicon; Amorphous silicon; Rapid thermal processing; CHEMICAL-VAPOR-DEPOSITION; POLY-SI TFTS; ALUMINUM-INDUCED CRYSTALLIZATION; DOPED POLYCRYSTALLINE SILICON; THIN-FILMS; LOW-TEMPERATURES; SOLAR-CELLS; PLASMA; PHASE; MICROCRYSTALLINE;

D O I：

10.1016/j.tsf.2010.05.028

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Rapid thermal process (RTP) is to induce boron-doped amorphous silicon into a high degree of crystallization of polycrystalline silicon in 5min. In addition to the short time characteristic, it also provides a relatively lower temperature route to prepare high percentage of polycrystalline silicon in comparison with solid phase crystallization method. Before RTP, boron is homogeneously doped into the amorphous silicon film by ion implantation technology. After rapid thermal processing, the grain size of the polycrystalline silicon was found about at 0.1-0.5 mu m. The degree crystallization of silicon is reached up to 99.1% with a good hole mobility of 138.6 cm(2)/Vs. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：7480 / 7482

页数：3

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