Characterization of TiN films alternately treated with PVD and Cr ion implantation

被引:8
|
作者
Oda, K [1 ]
Ohara, H [1 ]
Tsujioka, M [1 ]
Nomura, T [1 ]
机构
[1] Sumitomo Elect Ind Ltd, Itami Res Labs, Itami, Hyogo 664, Japan
基金
日本科学技术振兴机构;
关键词
ion implantation; physical vapour deposition; cathodic arc ion plating; tribology;
D O I
10.1016/S0254-0584(98)00079-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The projected ranges of the conventional ion implantation are generally below submicrons. This makes it difficult to apply the implantation techniques to the tribological uses. The combined process of the physical vapor deposition (PVD) and the ion implantation was developed to form the thick implanted layers over a few microns. In this process, firstly, the PVD films an deposited by the cathodic are ion plating method with a film thickness of 50 to 250 nm. Secondly, the metal ions are implanted using the pulsed are ion source at an energy below 80 keV without mass separation. These two processes were alternately conducted up to the film thickness of a few microns. Using this combined process, Cr implanted PVD-TiN films were studied. The film thicknesses of the implanted layers were 2-7 mu m, which are over ten times larger than those of conventionally implanted layers. Furthermore, these films showed excellent wear resistances compared with the unimplanted PVD-TiN films. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:266 / 269
页数:4
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