Molecular Beam Epitaxy of Highly Crystalline Monolayer Molybdenum Disulfide on Hexagonal Boron Nitride

被引：196

作者：

Fu, Deyi ^{[1
,2
]}

Zhao, Xiaoxu ^{[2
]}

Zhang, Yu-Yang ^{[3
,9
,10
]}

Li, Linjun ^{[4
,5
]}

Xu, Hai ^{[2
]}

Jang, A-Rang ^{[6
]}

Yoon, Seong In ^{[6
]}

Song, Peng ^{[2
]}

Poh, Sock Mui ^{[2
]}

Ren, Tianhua ^{[2
]}

Ding, Zijing ^{[4
,5
]}

Fu, Wei ^{[2
]}

Shin, Tae Joo ^{[7
]}

Shin, Hyeon Suk ^{[6
]}

Pantelides, Sokrates T. ^{[9
,10
]}

Zhou, Wu ^{[3
,8
]}

Loh, Kian Ping ^{[1
,2
,4
,5
]}

机构：

[1] Natl Res Fdn, SinBeRISE CREATE, CREATE Tower,1 Create Way, Singapore 138602, Singapore

[2] Natl Univ Singapore, Dept Chem, 3 Sci Dr 3, Singapore 117543, Singapore

[3] Univ Chinese Acad Sci, Sch Phys Sci, CAS Key Lab Vacuum Phys, Beijing 100049, Peoples R China

[4] Natl Univ Singapore, Ctr Adv Mat 2D, 6 Sci Dr 2, Singapore 117546, Singapore

[5] Natl Univ Singapore, Graphene Res Ctr, 6 Sci Dr 2, Singapore 117546, Singapore

[6] UNIST, Low Dimens Carbon Mat Ctr, Dept Energy Engn, Dept Chem, Ulsan 44919, South Korea

[7] UNIST, UNIST Cent Res Facil, Ulsan 44919, South Korea

[8] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA

[9] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

[10] Vanderbilt Univ, Dept Elect Engn & Comp Sci, 221 Kirkland Hall, Nashville, TN 37235 USA

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2017年 / 139卷 / 27期

基金：

新加坡国家研究基金会;

关键词：

CHEMICAL-VAPOR-DEPOSITION; HIGH-QUALITY MONOLAYER; SINGLE-LAYER MOS2; LARGE-AREA; GRAIN-BOUNDARIES; TRANSPORT-PROPERTIES; ATOMIC LAYERS; DIRECT GROWTH; PHOTOLUMINESCENCE; PIEZOELECTRICITY;

D O I：

10.1021/jacs.7b05131

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Atomically thin molybdenum disulfide (MoS2), a direct-band-gap semiconductor, is promising for applications in electronics and optoelectronics, but the scalable synthesis of highly crystalline film remains challenging. Here we report the successful epitaxial growth of a continuous, uniform, highly crystalline monolayer MoS2 film on hexagonal boron nitride (h-BN) by molecular beam epitaxy. Atomic force microscopy and electron microscopy studies reveal that MoS2 grown on h-BN primarily consists of two types of nucleation grains (0 aligned and 60 degrees antialigned domains). By adopting a high growth temperature and ultralow precursor flux, the formation of 60 degrees antialigned grains is largely suppressed. The resulting perfectly aligned grains merge seamlessly into a highly crystalline film. Large-scale monolayer MoS2 film can be grown on a 2 in. h-BN/sapphire wafer, for which surface morphology and Raman mapping confirm good spatial uniformity. Our study represents a significant step in the scalable synthesis of highly crystalline MoS2 films on atomically flat surfaces and paves the way to large-scale applications.

引用

页码：9392 / 9400

页数：9