Structural study of the InAs quantum-dot nucleation on GaAs(001)

被引：0
|
作者：
Patella, F
Nufris, S
Arciprete, F
Fanfoni, M
Placidi, E
Sgarlata, A
Balzarotti, A
机构：
[1] Univ Roma Tor Vergata, Dipartimento Fis, I-00133 Rome, Italy
[2] Ist Nazl Fis Mat, Rome, Italy
来源：
MICROELECTRONICS JOURNAL | 2003年 / 34卷 / 5-8期
关键词：
quantum-dot nucleation; molecular beam epitaxy; atomic force microscopy;
D O I：
10.1016/S0026-2692(03)00038-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated by atomic force microscopy subsequent stages of the heteroepitaxy of InAs on GaAs(001) from the initial formation of the strained two-dimensional wetting layer up to the development of three-dimensional quantum dots. We evidence structural features that play a role in the two-to-three-dimensional transition and discuss their contribution to the final morphology of the self-assembled nanoparticles. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：419 / 422
页数：4
相关论文
共 50 条
  • [21] Optimization of InAs/GaAs quantum-dot structures and application to 1.3-μm mode-locked laser diodes
    Li Mi-Feng
    Ni Hai-Qiao
    Ding Ying
    David, Bajek
    Kong Liang
    Ana, Cataluna Maria
    Niu Zhi-Chuan
    CHINESE PHYSICS B, 2014, 23 (02)
  • [22] Optical properties of InAs/GaAs quantum dot superlattice structures
    Imran, Ali
    Jiang, Jianliang
    Eric, Deborah
    Zahid, M. Noaman
    Yousaf, M.
    Shah, Z. H.
    RESULTS IN PHYSICS, 2018, 9 : 297 - 302
  • [23] The improvement of InAs/GaAs quantum dot properties capped by Graphene
    Rezgui, Kamel
    Othmen, Riadh
    Cavanna, Antonella
    Ajlani, Hosni
    Madouri, Ali
    Oueslati, Meherzi
    JOURNAL OF RAMAN SPECTROSCOPY, 2013, 44 (11) : 1529 - 1533
  • [24] Maximization of the InAs quantum-dot density through the growth of an intentionally non-homogeneous sample
    da Silva, MJ
    Quivy, AA
    González-Borrero, PP
    Marega, E
    JOURNAL OF CRYSTAL GROWTH, 2002, 236 (1-3) : 41 - 45
  • [25] Impurity free vacancy disordering of InAs/GaAs quantum dot and InAs/InGaAs dot-in-a-well structures
    Chia, C. K.
    Chua, S. J.
    Wang, Y. J.
    Yong, A. M.
    Chow, S. Y.
    THIN SOLID FILMS, 2007, 515 (7-8) : 3927 - 3931
  • [26] InAs/InGaAs/GaAs coupled quantum dot laser with predeposited InAs seed layer
    Lee, Chi-Sen
    Chang, Fu-Yu
    Liu, Day-Shan
    Lin, Hao-Hsiung
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (8A): : 6271 - 6274
  • [27] Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001)
    Bremner, S. P.
    Ban, K-Y
    Faleev, N. N.
    Honsberg, C. B.
    Smith, D. J.
    JOURNAL OF APPLIED PHYSICS, 2013, 114 (10)
  • [28] In situ determination of Sb distribution in Sb/GaAs(001) layer for high-density InAs quantum dot growth
    Kaizu, Toshiyuki
    Takahasi, Masamitu
    Yamaguchi, Koichi
    Mizuki, Jun'ichiro
    JOURNAL OF CRYSTAL GROWTH, 2008, 310 (15) : 3436 - 3439
  • [29] In situ X-ray diffraction during stacking of InAs/GaAs(001) quantum dot layers and photoluminescence spectroscopy
    Takahasi, M.
    Kaizu, T.
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) : 1761 - 1763
  • [30] Evolution of structural and optical characteristics in InAs quantum dots capped by GaAs layers comparable to dot height
    Lee, SJ
    Kim, JO
    Noh, SK
    Choe, JW
    Lee, KS
    JOURNAL OF CRYSTAL GROWTH, 2005, 284 (1-2) : 39 - 46
12345