ON Current Enhancement by Gate Controlled Strain in The InAs n-Type Piezoelectric Tunnel FETs

被引：0
|
作者：
Long, Yuxiong [1 ]
Huang, Jun Z. [2 ]
Wei, Zhongming [1 ]
Luo, Jun-Wei [1 ]
Jiang, Xiangwei [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
[2] MaxLinear Inc, Carlsbad, CA 92008 USA
来源：
2019 SILICON NANOELECTRONICS WORKSHOP (SNW) | 2019年
关键词：
D O I：
10.23919/snw.2019.8782933
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The gate-controlled strain induced by piezoelectric layers is used to boost the ON current of InAs n-type piezoelectric tunnel FETs. The advanced NEGF method with strained 8-band /cp Hamiltonian is employed in transport simulation. Our results suggest that the Piezo-TFETs can achieve about 800%enhancement of ION for the optimal device orientation [(1) over bar 10]/(110).
引用
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页码：49 / 50
页数：2
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