ON Current Enhancement by Gate Controlled Strain in The InAs n-Type Piezoelectric Tunnel FETs

被引：0
|
作者：
Long, Yuxiong [1 ]
Huang, Jun Z. [2 ]
Wei, Zhongming [1 ]
Luo, Jun-Wei [1 ]
Jiang, Xiangwei [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
[2] MaxLinear Inc, Carlsbad, CA 92008 USA
来源：
2019 SILICON NANOELECTRONICS WORKSHOP (SNW) | 2019年
关键词：
D O I：
10.23919/snw.2019.8782933
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The gate-controlled strain induced by piezoelectric layers is used to boost the ON current of InAs n-type piezoelectric tunnel FETs. The advanced NEGF method with strained 8-band /cp Hamiltonian is employed in transport simulation. Our results suggest that the Piezo-TFETs can achieve about 800%enhancement of ION for the optimal device orientation [(1) over bar 10]/(110).
引用
收藏
页码：49 / 50
页数：2
相关论文
共 50 条
  • [21] P- and N-type InAs nanocrystals with innately controlled semiconductor polarity
    Yoon, Jong Il
    Kim, Hyoin
    Kim, Meeree
    Cho, Hwichan
    Kwon, Yonghyun Albert
    Choi, Mahnmin
    Park, Seongmin
    Kim, Taewan
    Lee, Seunghan
    Jo, Hyunwoo
    Kim, Bongsoo
    Cho, Jeong Ho
    Park, Ji-Sang
    Jeong, Sohee
    Kang, Moon Sung
    SCIENCE ADVANCES, 2023, 9 (45)
  • [22] Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs
    Conzatti, F.
    Pala, M. G.
    Esseni, D.
    Bano, E.
    SOLID-STATE ELECTRONICS, 2013, 88 : 49 - 53
  • [23] A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs
    Conzatti, F.
    Pala, M. G.
    Esseni, D.
    Bano, E.
    Selmi, L.
    2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2011,
  • [24] Design rules for n-type SiGe hetero FETs
    Konig, U
    Gluck, M
    Gruhle, A
    Hock, G
    Kohn, E
    Bozon, B
    Nuernbergk, D
    Ostermann, T
    Hagelauer, R
    SOLID-STATE ELECTRONICS, 1997, 41 (10) : 1541 - 1547
  • [25] Vertical type double gate tunnelling FETs with thin tunnel barrier
    Kim, Jang Hyun
    Kim, Sang Wan
    Kim, Hyun Woo
    Park, Byung-Gook
    ELECTRONICS LETTERS, 2015, 51 (09) : 718 - 719
  • [26] Design rules for n-type SiGe Hetero FETs
    Daimler-Benz AG, Ulm, Germany
    Solid State Electron, 10 (1541-1547):
  • [27] CYCLOTRON-RESONANCE IN N-TYPE INAS
    LITTON, CW
    SMITH, SD
    BUTTON, KJ
    COHN, DR
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (03): : 382 - 382
  • [28] CURRENT CONTROLLED NEGATIVE RESISTANCE IN N-TYPE GALLIUM ARSENIDE
    HUGHES, WE
    PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (10): : 1715 - &
  • [29] PHONON PROPAGATION CHARACTERISTICS IN N-TYPE INAS
    HUNT, BD
    TRIVISONNO, J
    IEEE TRANSACTIONS ON SONICS AND ULTRASONICS, 1978, 25 (04): : 246 - 246
  • [30] NEGATIVE LONGITUDINAL MAGNETORESISTANCE OF N-TYPE INAS
    AGAEV, Y
    ALLANAZA.A
    SOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (10): : 2488 - +
12345