Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation

被引：1

作者：

Li Hui ^{[1
]}

Zhou Kai ^{[1
]}

Pang Jingbiao ^{[1
]}

Shao Yundong ^{[1
]}

Wang Zhu ^{[1
]}

Zhao Youwen ^{[2
]}

机构：

[1] Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2011年 / 26卷 / 07期

关键词：

UNDOPED GALLIUM ANTIMONIDE; SELF-DIFFUSION; NATIVE DEFECTS; N-TYPE; CRYSTALS; CATHODOLUMINESCENCE; PHOTOLUMINESCENCE; SEMICONDUCTORS; SPECTROSCOPY; LUMINESCENCE;

D O I：

10.1088/0268-1242/26/7/075016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Defects in as-grown undoped and tellurium-doped gallium antimonide were studied using positron lifetime and coincidence Doppler broadening measurements. The grown-in defects in these samples were supposed to be Ga vacancy (V-Ga)-related defects. More V-Ga-related defects were introduced into undoped and lightly Te-doped GaSb after electron irradiation at the doses of 1.0 x 10(17) cm(-2) and 1.0 x 10(18) cm(-2); however, in the heavily Te-doped GaSb, electron irradiation led to partial recovery of VGa. The role of Te content in the defect evolution is also discussed.

引用

页数：6

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