THIN-FILMS;
GAS SENSORS;
DEPOSITION;
MECHANISM;
CATALYSTS;
PD;
D O I:
10.1209/0295-5075/114/66002
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
In this letter we report the enhanced sensing of platinum (Pt)-loaded tungsten oxide (WO3) sensor compared to pure WO3 sensor towards hydrogen (H-2) gas at low operating temperature of 200 degrees C. The hydrogen sensing of pure and Pt-loaded WO3 sensors is reported at operating temperatures 200, 300 and 400 degrees C. The presence of Pt promotes the spillover mechanism and the dissociated H-2 atoms can react with adsorbed/lattice oxygen atoms to release electrons which in turn increases the conductivity of the WO3 film. The H-2 sensing mechanism of Pt-loaded WO3 sensor is investigated using micro-Raman spectroscopy. The Raman spectrum of Pt-loaded sensing layer shows a shift of symmetric stretching band from 796 to 804 cm(-1) with the introduction of H-2 gas. Copyright (C) EPLA, 2016