Hydrogen sensors based on Pt-loaded WO3 sensing layers

被引：28
|
作者：
Bose, R. Jolly [1 ,2 ]
Illyaskutty, Navas [3 ]
Tan, K. S. [4 ]
Rawat, R. S. [4 ]
Matham, Murukeshan Vadakke [5 ]
Kohler, Heinz [3 ]
Pillai, V. P. Mahadevan [1 ]
机构：
[1] Univ Kerala Kariavattom, Dept Optoelect, Thiruvananthapuram 695581, Kerala, India
[2] Govt Coll Kariavattom, Dept Phys, Thiruvananthapuram 695581, Kerala, India
[3] Karlsruhe Univ Appl Sci, Inst Sensor & Informat Syst, Moltkestr 30, D-76133 Karlsruhe, Germany
[4] Nanyang Technol Univ, Natl Inst Educ, Nat Sci & Sci Educ, Singapore 637616, Singapore
[5] Nanyang Technol Univ, Sch Mech & Aerosp Engn, Div Mfg Engn, Singapore 637616, Singapore
来源：
EPL | 2016年 / 114卷 / 06期
关键词：
THIN-FILMS; GAS SENSORS; DEPOSITION; MECHANISM; CATALYSTS; PD;
D O I：
10.1209/0295-5075/114/66002
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In this letter we report the enhanced sensing of platinum (Pt)-loaded tungsten oxide (WO3) sensor compared to pure WO3 sensor towards hydrogen (H-2) gas at low operating temperature of 200 degrees C. The hydrogen sensing of pure and Pt-loaded WO3 sensors is reported at operating temperatures 200, 300 and 400 degrees C. The presence of Pt promotes the spillover mechanism and the dissociated H-2 atoms can react with adsorbed/lattice oxygen atoms to release electrons which in turn increases the conductivity of the WO3 film. The H-2 sensing mechanism of Pt-loaded WO3 sensor is investigated using micro-Raman spectroscopy. The Raman spectrum of Pt-loaded sensing layer shows a shift of symmetric stretching band from 796 to 804 cm(-1) with the introduction of H-2 gas. Copyright (C) EPLA, 2016
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页数：6
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