Liquid phase epitaxy growth and structural characterization of highly-doped Er3+:LiYF4 thin films

被引：2
|
作者：
Basyrova, Liza [1 ]
Brasse, Gurvan [1 ]
Loiko, Pavel [1 ]
Grygiel, Clara [1 ]
Sol, Rosa Maria [2 ]
Aguil, Magdalena [2 ]
Diaz, Francesc [2 ]
Mateos, Xavier [2 ]
Benayad, Abdelmjid [1 ]
Doualan, Jean-Louis [1 ]
Camy, Patrice [1 ]
机构：
[1] Univ Caen Normandie, Ctr Rech Ions Mat & Photon CIMAP, CNRS, UMR 6252,CEA,ENSICAEN, 6 Blvd Marechal Juin, F-14050 Caen 4, France
[2] Univ Rovira & Virgili URV, Fis & Cristallog Mat & Nanomat FiCMA FiCNA, Marcel li Domingo 1, Tarragona 43007, Spain
来源：
OPTICAL MATERIALS | 2022年 / 132卷
关键词：
Liquid phase epitaxy; Lithium yttrium fluoride; Thin films; Structure; Morphology; WAVE-GUIDE LASER; EMISSION PROPERTIES; ER3+; OPERATION; PARAMETERS; ER-3+; LIYF4;
D O I：
10.1016/j.optmat.2022.112574
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Single-crystalline layers of LiYF4, singly doped with Er3+ ions and codoped with Er3+,Gd3+ ions are grown on (001) oriented undoped bulk LiYF4 substrates by Liquid Phase Epitaxy using LiF as a solvent. For the starting composition 73 LiF - 27 REF3 mol% (RE = Y, Er, Gd), the onset of crystallization is about 746 degrees C. The effect of apparent supercooling on the growth behavior is studied indicating an optimum value of 0.5 degrees C. Layers of 30-90 mu m in thickness are obtained corresponding to a growth rate of 0.8-1.6 +/- 0.5 mu m/min. The morphology, structure and composition of the layers are studied. The layers exhibit tetragonal structure (sp. gr . I4(1)/a) and small lattice mismatch with respect to the substrate. The segregation coefficient for Er 3+ ions is close to unity. Intense mid-infrared luminescence of Er3+ ions at similar to 2.8 mu m is observed from the layers, which, together with the waveguiding properties, indicates their suitability for waveguide lasers.
引用
收藏
页数：9
相关论文
共 50 条
  • [41] Luminescence properties of Er3+ doped zirconia thin films and ZrO2/Er2O3 nanolaminates grown by atomic layer deposition
    Aleksanyan, Eduard
    Kirm, Marco
    Feldbach, Eduard
    Kukli, Kaupo
    Lange, Sven
    Sildos, Ilmo
    Tamm, Aile
    OPTICAL MATERIALS, 2017, 74 : 27 - 33
  • [42] Growth of InBixSb(1-x) films on GaAs(001) substrates using liquid phase epitaxy and their characterization
    Dixit, VK
    Keerthi, KS
    Bera, P
    Bhat, HL
    JOURNAL OF CRYSTAL GROWTH, 2002, 241 (1-2) : 171 - 176
  • [43] Effects of growth temperature on the surface morphology of silicon thin films on (111) silicon monocrystalline substrate by liquid phase epitaxy
    Ujihara, T
    Kanda, E
    Obara, K
    Fujiwara, K
    Usami, N
    Sazaki, G
    Alguno, A
    Shishido, T
    Nakajima, K
    JOURNAL OF CRYSTAL GROWTH, 2004, 266 (04) : 467 - 474
  • [44] Highly efficient Er- and Yb-doped YAI3(BO3)4 laser materials: crystal growth and characterization
    Maltsev, V. V.
    Volkova, E. A.
    Leonyuk, N. I.
    Tolstik, N. A.
    Kuleshov, N. V.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2008, 10 (11): : 2890 - 2893
  • [45] Characterization and growth of doped-PbS in situ with Bi3+, Cd2+ and Er3+ ions by chemical bath
    Chavez Portillo, M.
    Portillo Moreno, O.
    Gutierrez Perez, R.
    Palomino Merino, R.
    Santiesteban Juarez, H.
    Tehuacanero Cuapa, S.
    Rubio Rosas, E.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 72 : 22 - 31
  • [46] Growth and characterization of large REBa2Cu3Oy (RE = Y, Yb) crystalline films by liquid phase epitaxy process
    Nomura, K
    Hoshi, S
    Yamada, T
    Inoue, A
    Nakamura, Y
    Izumi, T
    Murata, K
    Shiohara, Y
    JOURNAL OF THE JAPAN INSTITUTE OF METALS, 2002, 66 (04) : 289 - 296
  • [47] Growth and structural characterization of YMnO3 thin films grown by pulsed liquid injection MOCVD on Si and SrTiO3 substrates
    Iliescu, Ionela
    Boudard, Michel
    Pignard, Stephane
    Rapenne, Laetitia
    Chaudouet, Patrick
    Roussel, Herve
    PHASE TRANSITIONS, 2013, 86 (11) : 1094 - 1103
  • [48] Fabrication of crystalline β-BaB2O4 thin films for nonlinear optical applications by liquid phase epitaxy
    Liu, JF
    Zhou, GQ
    He, XM
    Xu, J
    Qian, LJ
    Light-Emitting Diode Materials and Devices, 2005, 5632 : 258 - 261
  • [49] Structural properties of undoped and doped with Er3+ ions ZnGa2O4 nanomaterials obtained by hydrothermal method
    Vasile, M.
    Ianasi, C.
    Birdeanu, A. V.
    Vasile, E.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2011, 13 (9-10): : 1273 - 1278
  • [50] Rapid epitaxial growth of magnetoelectric thick BiFeO3 films by hybrid liquid-phase epitaxy
    Li, Meicheng
    Kursumovic, Ahmed
    Qi, Xiaoding
    MacManus-Driscoll, Judith L.
    JOURNAL OF CRYSTAL GROWTH, 2006, 293 (01) : 128 - 135
12345