Voltammetric determination of electronic structure of quantum dots

被引:7
|
作者
Xian, Longbin [1 ]
Zhang, Xiaolin [1 ]
Li, Xiuting [1 ]
机构
[1] Shenzhen Univ, Inst Adv Study, Shenzhen 518060, Peoples R China
基金
中国国家自然科学基金;
关键词
Electronic structure; Voltammetry; Quantum dots; Redox potentials; QUASI-PARTICLE GAP; CYCLIC VOLTAMMETRY; CDSE NANOCRYSTALS; REDOX POTENTIALS; ENERGY-LEVELS; SOLAR-CELL; BAND-GAP; SIZE; LIGAND; CDTE;
D O I
10.1016/j.coelec.2022.101022
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Electronic structure plays an important role in determining the physiochemical properties of semiconductor quantum dots (QDs). Fabrication of high-performance QD devices relies on the reliable determination of electronic structure of QDs. Voltammetry enables the easily accessible detection on the energy levels of QDs. Herein, the fundamentals of voltammetric detection are first reviewed and discussed. Since the common ways used for tailoring electronic structure of QDs include tuning size, surface engineering, and varying composition, we next summarize the recent research on using voltammetry for probing the energy levels when studying these three effects.
引用
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页数:7
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