Comparison of Ni/Au and Pd/Au Ohmic Contacts to p-GaN

被引：0

作者：

Sasada, M. ^{[1
]}

Sasakura, A. ^{[1
]}

Takashima, N. ^{[1
]}

Tokuda, H. ^{[1
]}

Kuzuhara, M. ^{[1
]}

机构：

[1] Univ Fukui, Grad Sch Engn, 3-9-1 Bunkyo, Fukui 9108507, Japan

来源：

2017 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) | 2017年

关键词：

GaN; MOS; ohmic contact; anneal; Ni; Pd; TRANSISTORS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a comparative study of Ni/Au and Pd/Au ohmic contacts to p-GaN. Effects of annealing temperature and acceptor concentration on ohmic characteristics were investigated. It was found that both ohmic contacts exhibited a contact resistivity of less than 4x10(-3) Omega cm(2) after 600 degrees C annealing. Moreover, fairly good ohmic behaviors were observed for Pd/Au even without annealing.

引用

页码：96 / 97

页数：2

共 3 条

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