Selective SiN/SiO2 Etching by SF6/H2/Ar/He Plasma

被引：4

作者：

Pankratiev, P. ^{[1
]}

Barsukov, Yu. ^{[1
]}

Vinogradov, A. ^{[2
]}

Volynets, V. ^{[3
]}

Kobelev, A. ^{[1
]}

Smirnov, A. S. ^{[1
]}

机构：

[1] Peter Great St Petersburg Polytech Univ, 29 Politech Skaya, St Petersburg 195251, Russia

[2] Ioffe Inst, 26 Politekh Skaya, St Petersburg 194021, Russia

[3] Samsung Elect Co Ltd, Mechatron R&D Ctr, 1 Samsung Elect Ro, Hwasung City 445701, Gyeonggi Do, South Korea

来源：

PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON ADVANCES AND APPLICATIONS IN PLASMA PHYSICS (AAPP 2019) | 2019年 / 2179卷

关键词：

SILICON-NITRIDE; MECHANISM; NITROGEN;

D O I：

10.1063/1.5135490

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper presents the experimental data about SiN and SiO2 etching by SF6/H-2/Ar/He plasma discharge. It has been shown that SiN etch rate increases if add small amount of He (less than 5 sccm) into the discharge. The SiO, etch rate does not depend on Ile content in the plasma discharge and is almost the constant. The possible role of helium appears in reactions with H, species. Namely, He or metastable He* increases rate of H-atoms production. It is known from the previous publications that H-atoms enhance SiN etching Thus, helium can help to selectively etch silicon nitride over silicon oxide.

引用

页数：4

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