High-Power Laser Thyristors With High Injection Efficiency (λ=890-910 nm)

被引:22
作者
Slipchenko, Sergey O. [1 ]
Podoskin, Aleksandr A. [1 ]
Rozhkov, Alexsander V. [1 ]
Pikhtin, Nikita A. [1 ,2 ]
Tarasov, Ilya S. [1 ]
Bagaev, Timur A. [3 ]
Ladugin, Maxim A. [3 ]
Marmalyuk, Aleksandr A. [3 ]
Padalitsa, Anatoliy A. [3 ]
Simakov, Vladimir A. [3 ]
机构
[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] St Petersburg State Univ, St Petersburg 199034, Russia
[3] Stelmakh Res & Dev Inst Polyus, Moscow 117342, Russia
基金
俄罗斯科学基金会;
关键词
Laser-thyristor; semiconductor laser; thyristor heterostructure; DIODES;
D O I
10.1109/LPT.2014.2370064
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This letter shows an experimentally studied approach that increases injection efficiency of high-power laser thyristors emitting in the 890-910 nm spectral band. The developed laser thyristors exhibit 43-W maximum peak output power of laser pulses at 95-nm full width at half maximum duration. At the same time, the maximum amplitude of the current pulse generated in the laser-thyristor circuit reached 90 A.
引用
收藏
页码:307 / 310
页数:4
相关论文
共 10 条
  • [1] Blicher A., 1976, THYRISTOR PHYS
  • [2] CONCENTRATION-DEPENDENCE OF ABSORPTION-COEFFICIENT FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.3 AND 1.6 EV
    CASEY, HC
    SELL, DD
    WECHT, KW
    [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) : 250 - 257
  • [3] 3 nJ, 100 ps laser pulses generated with an asymmetric waveguide laser diode for a single-photon avalanche diode time-of-flight (SPAD TOF) rangefinder application
    Hallman, Lauri W.
    Haring, Kimmo
    Toikkanen, Lauri
    Leinonen, Tomi
    Ryvkin, Boris S.
    Kostamovaara, Juha T.
    [J]. MEASUREMENT SCIENCE AND TECHNOLOGY, 2012, 23 (02)
  • [4] Performance improvement by a saturable absorber in gain-switched asymmetric-waveguide laser diodes
    Lanz, Brigitte
    Ryvkin, Boris S.
    Avrutin, Eugene A.
    Kostamovaara, Juha T.
    [J]. OPTICS EXPRESS, 2013, 21 (24): : 29780 - 29791
  • [5] Laser diodes with several emitting regions (λ=800-1100 nm) on the basis of epitaxially integrated heterostructures
    Marmalyuk, A. A.
    Davydova, E. I.
    Zverkov, M. V.
    Konyaev, V. P.
    Krichevsky, V. V.
    Ladugin, M. A.
    Lebedeva, E. I.
    Petrov, S. V.
    Sapozhnikov, S. M.
    Simakov, V. A.
    Uspenskiy, M. B.
    Yarotskaya, I. V.
    Pikhtin, N. A.
    Tarasov, I. S.
    [J]. SEMICONDUCTORS, 2011, 45 (04) : 519 - 525
  • [6] A study of nonlinear lasing dynamics of an InGaAs/AlGaAs/GaAs heterostructure power laser-thyristor emitting at 905 nm
    Slipchenko, S. O.
    Podoskin, A. A.
    Rozhkov, A. V.
    Pikhtin, N. A.
    Tarasov, I. S.
    Bagaev, T. A.
    Konyaev, V. P.
    Ladugin, M. A.
    Marmalyuk, A. A.
    Padalitsa, A. A.
    Simakov, V. A.
    [J]. JOURNAL OF APPLIED PHYSICS, 2014, 116 (08)
  • [7] On the control efficiency of a high-power laser thyristor emitting in the 890-910 nm spectral range
    Slipchenko, S. O.
    Podoskin, A. A.
    Vasil'eva, V. V.
    Pikhtin, N. A.
    Rozhkov, A. V.
    Gorbatyuk, A. V.
    Zolotarev, V. V.
    Veselov, D. A.
    Jabotinskii, A. V.
    Petukhov, A. A.
    Tarasov, I. S.
    Bagaev, T. A.
    Zverkov, M. V.
    Konyaev, V. P.
    Kurniavko, Y. V.
    Ladugin, M. A.
    Lobintsov, A. V.
    Marmalyuk, A. A.
    Padalitsa, A. A.
    Simakov, V. A.
    [J]. SEMICONDUCTORS, 2014, 48 (05) : 697 - 699
  • [8] High-Power Pulse Semiconductor Laser-Thyristor Emitting at 900-nm Wavelength
    Slipchenko, Sergey O.
    Podoskin, Aleksandr A.
    Rozhkov, Alexsander V.
    Pikhtin, Nikita A.
    Tarasov, Ilya S.
    Bagaev, Timur A.
    Zverkov, Mikhail V.
    Konyaev, Vadim P.
    Kurniavko, Yuriy V.
    Ladugin, Maxim A.
    Marmalyuk, Aleksandr A.
    Padalitsa, Anatoliy A.
    Simakov, Vladimir A.
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2013, 25 (17) : 1664 - 1667
  • [9] High power CW (16 W) and pulse (145 W) laser diodes based on quantum well heterostructures
    Tarasov, Ilya S.
    Pikhtin, Nikita A.
    Slipchenko, Sergey O.
    Sokolova, Zinaida N.
    Vinokurov, Dmitry A.
    Borschev, Kirill S.
    Kapitonov, Vladimir A.
    Khomylev, Maxim A.
    Leshko, Andrey Yu.
    Lyutetskiy, Andrey V.
    Stankevich, Alexey L.
    [J]. SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY, 2007, 66 (4-5) : 819 - 823
  • [10] Root-Cause Analysis of Peak Power Saturation in Pulse-Pumped 1100 nm Broad Area Single Emitter Diode Lasers
    Wang, Xiaozhuo
    Crump, Paul
    Wenzel, Hans
    Liero, Armin
    Hoffmann, Thomas
    Pietrzak, Agnieszka
    Schultz, Christoph Matthias
    Klehr, Andreas
    Ginolas, Arnim
    Einfeldt, Sven
    Bugge, Frank
    Erbert, Goetz
    Traenkle, Guenther
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2010, 46 (05) : 658 - 665