AlGaN ultraviolet photoconductors grown on sapphire

被引：190
作者：
Walker, D
Zhang, X
Kung, P
Saxler, A
Javadpour, S
Xu, J
Razeghi, M
机构：
[1] Center for Quantum Devices, EECS Department, Northwestern University, Evanston, IL 60208
来源：
APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 15期
关键词：
D O I：
10.1063/1.115597
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A(x)Ga(1-x)N (0 less than or equal to x less than or equal to 0.50) ultraviolet photoconductors with a minimum cutoff wavelength shorter than 260 nm have been fabricated and characterized. The AlGaN active layers were grown on (00.1) sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The spectral responsivity of the GaN detector at 360 nm is about 1 A/W biased at 8 V at room temperature. The carrier lifetime derived from the voltage-dependent responsivity is 0.13-0.36 ms.
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页码：2100 / 2101
页数：2
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