Mobility spectrum analysis on three-dimensional topological insulator BiSbTeSe2

被引：4

作者：

Wang, Jimin ^{[1
]}

Kurzendorfer, Alexander ^{[1
]}

Chen, Lin ^{[1
]}

Wang, Zhiwei ^{[2
,3
]}

Ando, Yoichi ^{[2
]}

Xu, Yang ^{[4
]}

Miotkowski, Ireneusz ^{[4
]}

Chen, Yong P. ^{[4
,5
,6
,7
,8
,9
,10
]}

Weiss, Dieter ^{[1
]}

机构：

[1] Univ Regensburg, Inst Expt & Appl Phys, D-93040 Regensburg, Germany

[2] Univ Cologne, Phys Inst 2, Zulpicher Str 77, D-50937 Cologne, Germany

[3] Beijing Inst Technol, Sch Phys, Ctr Quantum Phys, Key Lab Adv Optoelect Quantum Architecture & Meas, Beijing 100081, Peoples R China

[4] Purdue Univ, Dept Phys & Astron, W Lafayette, IN 47907 USA

[5] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[6] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

[7] Purdue Univ, Purdue Quantum Sci & Engn Inst, W Lafayette, IN 47907 USA

[8] Tohoku Univ, WPI AIMR Int Res Ctr Mat Sci, Sendai, Miyagi 9808577, Japan

[9] Aarhus Univ, Inst Phys & Astron, DK-8000 Aarhus C, Denmark

[10] Aarhus Univ, Villum Ctr Hybrid Quantum Mat & Devices, DK-8000 Aarhus C, Denmark

来源：

APPLIED PHYSICS LETTERS | 2021年 / 118卷 / 25期

基金：

欧洲研究理事会;

关键词：

SURFACE-STATE;

D O I：

10.1063/5.0047773

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We conducted mobility spectrum analysis on a high quality three dimensional topological insulator film of BiSbTeSe2 to extract mobility mu and carrier density n. Top and bottom gates were applied to tune the carrier density on top and bottom surfaces independently. At 1.5K, when the conduction is entirely dominated by the Dirac surface states, we always find two dominant conduction channels (top and bottom surfaces), with mu = 500 - 3000 cm(2)/(Vs) and n on the order of 1 0 12 c m - 2. However, at sufficiently high temperature ( T = 85 K), when the bulk contributes, a third channel with maximum mobility mu similar to 400cm(2)/(Vs) and n on the order of 1 0 11 - 1 0 13 c m - 2 opens. Our data show the feasibility of the method to analyze the different conduction channels in a topological insulator, being also promising for other similar material systems.

引用

页数：6

共 21 条

[1] Large anomalous Hall effect in ferromagnetic insulator-topological insulator heterostructures
Alegria, L. D.
Ji, H.
Yao, N.
Clarke, J. J.
Cava, R. J.
Petta, J. R.
[J]. APPLIED PHYSICS LETTERS, 2014, 105 (05)
[2] Two-dimensional surface state in the quantum limit of a topological insulator
Analytis, James G.
McDonald, Ross D.
Riggs, Scott C.
Chu, Jiun-Haw
Boebinger, G. S.
Fisher, Ian R.
[J]. NATURE PHYSICS, 2010, 6 (12) : 960 - 964
[3] Topological Insulator Materials
Ando, Yoichi
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2013, 82 (10)
[4] Application of quantitative mobility-spectrum analysis to multilayer HgCdTe structures
Antoszewski, J
Faraone, L
Vurgaftman, I
Meyer, JR
Hoffman, CA
[J]. JOURNAL OF ELECTRONIC MATERIALS, 2004, 33 (06) : 673 - 683
[5] Analysis of magnetic field dependent Hall data in narrow bandgap Hg1-xCdxTe grown by molecular beam epitaxy
Antoszewski, J
Faraone, L
[J]. JOURNAL OF APPLIED PHYSICS, 1996, 80 (07) : 3881 - 3892
[6] Tunable Dirac cone in the topological insulator Bi2-xSbxTe3-ySey
Arakane, T.
Sato, T.
Souma, S.
Kosaka, K.
Nakayama, K.
Komatsu, M.
Takahashi, T.
Ren, Zhi
Segawa, Kouji
Ando, Yoichi
[J]. NATURE COMMUNICATIONS, 2012, 3
[7] DETERMINATION OF ELECTRICAL TRANSPORT-PROPERTIES USING A NOVEL MAGNETIC FIELD-DEPENDENT HALL TECHNIQUE
BECK, WA
ANDERSON, JR
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) : 541 - 544
[8] Superconducting proximity effect and Majorana fermions at the surface of a topological insulator
Fu, Liang
Kane, C. L.
[J]. PHYSICAL REVIEW LETTERS, 2008, 100 (09)
[9] Josephson current and noise at a superconductor/quantum-spin-Hall-insulator/superconductor junction
Fu, Liang
Kane, C. L.
[J]. PHYSICAL REVIEW B, 2009, 79 (16)
[10] Colloquium: Topological insulators
Hasan, M. Z.
Kane, C. L.
[J]. REVIEWS OF MODERN PHYSICS, 2010, 82 (04) : 3045 - 3067

← 1 2 3 →