Multidimensional modeling of nanotransistors

被引：32
作者：
Anantram, M. P. [1 ]
Svizhenko, A.
机构：
[1] Univ Waterloo, ECE Dept, Waterloo Nanotechnol Ctr, Waterloo, ON N2L 3G1, Canada
[2] Silvaco Int, Santa Clara, CA 95054 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 09期
关键词：
algorithm; computational electronics; contact resistance; gate leakage; Green's function; modeling; MOSFETs; nanoelectronics; nanomaterials; nanotechnology; non equilibrium quantum transport; parallel processing; phonons; quantum effects; quantum theory; review; scattering; semiconductors; silicon; simulator; software; RANGE COULOMB INTERACTIONS; SMALL SI DEVICES; QUANTUM TRANSPORT; TRANSISTORS; EQUATION; MOSFETS;
D O I：
10.1109/TED.2007.902857
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we review our recent work using the nonequilibrium Green's function method to model nanotransistors. After presenting a motivation for the need of quantum mechanical modeling, an account of the equations and implementation is given for both 1-D and 2-D modeling. Examples are given to highlight the use of the developed models. Finally, possible future directions in quantum mechanical modeling of transport in nanotransistors are highlighted along with computational challenges.
引用
收藏
页码：2100 / 2115
页数：16
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