A low voltage design technique for low noise RF integrated Circuits

被引:0
|
作者
Abou-Allam, E [1 ]
Manku, T [1 ]
机构
[1] Univ Waterloo, Dept Elect & Comp Engn, Ctr Wireless Commun, RF Technol Grp, Waterloo, ON N2L 3G1, Canada
关键词
D O I
暂无
中图分类号
TP18 [人工智能理论];
学科分类号
081104 ; 0812 ; 0835 ; 1405 ;
摘要
Analysis and optimization of the bias conditions and noise parameters of MOS devices are presented. A design technique based on a narrowband LC-folded cascode topology is proposed for low voltage RF integrated Circuits. The technique is applied to the design of a 1V LNA operating at 1.9 GHz using a 0.5 mu m CMOS technology. Simulation results show that the LNA provide a noise figure of 1.7 dB, gain of 10 dB, and is well matched at the input. The LNA also provides a minimum noise figure of 1.6 dB.
引用
收藏
页码:C373 / C377
页数:5
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