Dynamic and low-frequency noise characterization of Si-Ge heterojunction-bipolar transistors at cryogenic temperatures

被引：8
|
作者：
Arnaboldi, C [1 ]
Boella, G
Pessina, G
机构：
[1] Ist Nazl Fis Nucl, I-20126 Milan, Italy
[2] Univ Milan, Dipartmento Fis, I-20126 Milan, Italy
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2003年 / 50卷 / 04期
关键词：
cryogenic electronics; noise; noise measurements; semiconductor device noise;
D O I：
10.1109/TNS.2003.814590
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present the characterization of the static and low-frequency noise performances of some commercial Si-Ge heterojunction bipolar transistors from 4.2 K to room temperature. The low injection region of operation was considered in view of their possible applications for the readout of array of cryogenic detectors.
引用
收藏
页码：921 / 927
页数：7
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