Dynamic and low-frequency noise characterization of Si-Ge heterojunction-bipolar transistors at cryogenic temperatures

被引：8

作者：

Arnaboldi, C ^{[1
]}

Boella, G

Pessina, G

机构：

[1] Ist Nazl Fis Nucl, I-20126 Milan, Italy

[2] Univ Milan, Dipartmento Fis, I-20126 Milan, Italy

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2003年 / 50卷 / 04期

关键词：

cryogenic electronics; noise; noise measurements; semiconductor device noise;

D O I：

10.1109/TNS.2003.814590

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the characterization of the static and low-frequency noise performances of some commercial Si-Ge heterojunction bipolar transistors from 4.2 K to room temperature. The low injection region of operation was considered in view of their possible applications for the readout of array of cryogenic detectors.

引用

页码：921 / 927

页数：7

共 50 条

[31] BURST AND LOW-FREQUENCY GENERATION-RECOMBINATION NOISE IN DOUBLE-HETEROJUNCTION BIPOLAR TRANSISTORS.
Zhang, X.N.
Univ of Minnesota, Electrical Engineering Dep
van der Ziel, A.
Duh, K.H.
Morkoc, H.
1600, (EDL-5):
[32] CURRENT DEPENDENCE OF LOW-FREQUENCY NOISE IN BIPOLAR-TRANSISTORS
DAS, MB
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (12) : 1092 - 1098
[33] Low frequency noise characteristics of AlInAs/InGaAs heterojunction bipolar transistors
Jang, SL
Chen, WM
Lin, HH
Huang, CH
SOLID-STATE ELECTRONICS, 1996, 39 (11) : 1581 - 1592
[34] Low-frequency noise and random telegraph signal noise in SiGe:C heterojunction bipolar transistors -: Impact of carbon concentration
Raoult, Jeremy
Delseny, Colette
Pascal, Fabien
Marin, Mathieu
Deen, M. Jamal
NOISE AND FLUCTUATIONS IN CIRCUITS, DEVICES, AND MATERIALS, 2007, 6600
[35] DC CONDUCTION AND LOW-FREQUENCY NOISE CHARACTERISTICS OF GAALAS/GAAS SINGLE HETEROJUNCTION BIPOLAR-TRANSISTORS AT ROOM-TEMPERATURE AND LOW-TEMPERATURES
RAMAN, VK
VISWANATHAN, CR
KIM, ME
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1991, 39 (06) : 1054 - 1058
[36] High-frequency noise analysis of Si/SiGe heterojunction bipolar transistors
Herzel, F
Heinemann, B
INTERNATIONAL JOURNAL OF ELECTRONICS, 1996, 81 (01) : 37 - 48
[37] Characterization of low-frequency noise in InGaAs-channel HJ-FET at cryogenic temperatures
Communications Research Lab, Japan
J Commun Res Lab, 3 (297-298):
[38] LOW-FREQUENCY NOISE CHARACTERISTICS OF SELF-ALIGNED ALGAAS/GAAS POWER HETEROJUNCTION BIPOLAR-TRANSISTORS
TUTT, MN
PAVLIDIS, D
KHATIBZADEH, A
BAYRAKTAROGLU, B
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (02) : 219 - 230
[39] EXPERIMENTAL INVESTIGATION OF LOW-FREQUENCY NOISE PROPERTIES OF ALGAAS/GAAS AND GAINP/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
SHIN, JH
LEE, JW
SEO, YS
KIM, YS
KIM, B
COMPOUND SEMICONDUCTORS 1994, 1995, (141): : 625 - 628
[40] Lateral base design rules for optimized low-frequency noise of differentially grown SiGe heterojunction bipolar transistors
Sandén, M
Malm, BG
Grahn, JV
Östling, M
MICROELECTRONICS RELIABILITY, 2001, 41 (06) : 881 - 886

← 1 2 3 4 5 →