Terahertz Schottky barrier diodes based on homoepitaxial GaN materials

被引：0

作者：

Liang, Shixiong ^{[1
]}

Xing, Dong ^{[1
]}

Wang, J. L. ^{[1
]}

Yang, D. B. ^{[1
]}

Fang, Y. L. ^{[1
]}

Gu, G. D. ^{[1
]}

Guo, H. Y. ^{[1
]}

Zhang, L. S. ^{[1
]}

Zhao, X. Y. ^{[1
]}

Feng, Zhihong ^{[1
]}

机构：

[1] Hebei Semicond Res Inst, ASIC, Natl Key Lab, Shijiazhuang 050051, Peoples R China

来源：

2015 40TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ) | 2015年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Schottky barrier diodes based on homoepitaxial n-type GaN materials are fabricated for high-power terahertz multiplier applications. The dislocation density of the GaN homoepilayer is estimated to be about 2-3 orders lower than the typical dislocation density of hetero-epitaxial GaN, the defect density and square resistance are also reduced. So, the series resistance of the diodes is decreased. The air-bridge structure and the substrate thinning-down technique were adopted to reduce the parasitic parameters. The cut-off frequency (f(c)) is improved to be above 1.2THz at zero bias by this method.

引用

页数：2

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