Experimental results and die area efficient self-shielded on-chip vertical solenoid inductors for multi-GHz CMOS RFIC

被引：0

作者：

Tsui, HY ^{[1
]}

Lau, J ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong, Peoples R China

来源：

2003 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

On-chip circular vertical solenoid inductors have been designed and fabricated using standard 6-metal layer CMOS process. Compared to the 4.1nH circular planar spiral inductor on the same chip, the 4.8nH solenoid inductor gives about 20% increase in maximum quality-factor (QF) and 50% increase in self-resonant frequency (SRF), but only occupies 20% of the area. The inductor impedance can be modeled by a simple RLC circuit valid beyond 20GHz.

引用

页码：243 / 246

页数：4