Study on high-speed deep etching of GaN film by UV laser ablation

被引：8

作者：

Zhang, J ^{[1
]}

Sugioka, K ^{[1
]}

Wada, S ^{[1
]}

Tashiro, H ^{[1
]}

Midorikawa, K ^{[1
]}

机构：

[1] RIKEN, Inst Phys & Chem Res, Wako, Saitama 35101, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

microfabrication; GaN; etching; UV; VUV; laser ablation;

D O I：

10.1016/S0022-0248(98)00272-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

High-speed deep etching of GaN thin films by UV (266 nm) laser ablation followed by a treatment in HCl solution, was achieved. The etch rate was as high as 50 nm/pulse. Scanning electron microscopy and scanning probe microscopy measurement results indicate that the surface of the etched films was structurally well-defined and cleanly patterned. Micro-photoluminescence measurements of ablated samples revealed no severe damage to the optical properties or the crystal structure. In addition, coupling with VUV (133-184 nm) laser beams, the etch quality of GaN was markedly improved. The etch rate was 55 nm/pulse (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：725 / 729

页数：5

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