Ti-doped copper nitride films deposited by cylindrical magnetron sputtering

被引：35
|
作者：
Fan, X. Y.
Wu, Z. G.
Zhang, G. A.
Li, C.
Geng, B. S.
Li, H. J.
Yan, P. X. [1 ]
机构：
[1] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China
[2] Chinese Acad Sci, Inst Chem & Phys, Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2007年 / 440卷 / 1-2期
关键词：
copper nitride; surface morphology; electrical resistivity; optical band gap;
D O I：
10.1016/j.jallcom.2006.09.006
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Pure and Ti-doped copper nitride films were prepared by cylindrical magnetron sputtering on glass substrates at room temperature. The preferred orientation for copper nitride films changes from [111] for undoped film to [100] for Ti-doped films. The variation of surface morphology correlates to that of preferred orientation resulting from the variation of Ti-doped content. The electrical resistivity and optical band gap increases as the Ti-doped content increases. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：254 / 258
页数：5
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