Features of the Surface Region of the Semiconductor Structure Formed by Metal-Assisted Chemical Etching of Single-Crystal Silicon

被引：4

作者：

Melnik, N. N. ^{[1
]}

Tregulov, V. V. ^{[2
]}

Rybin, N. B. ^{[3
]}

Ivanov, A. I. ^{[2
]}

机构：

[1] Russian Acad Sci, Lebedev Phys Inst, 53 Leninskii Pr, Moscow 119991, Russia

[2] Ryazan State Univ, 46 Svobody St, Ryazan 390000, Russia

[3] Ryazan State Radio Engn Univ, 59-1 Gagarina St, Ryazan 390005, Russia

来源：

BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE | 2019年 / 46卷 / 10期

关键词：

metal-assisted chemical etching; metal-semiconductor structure; Raman scattering; capacitance-voltage characteristic;

D O I：

10.3103/S1068335619100063

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The surface region of the semiconductor structure containing a porous layer formed by metal-assisted etching of a single-crystal silicon substrate is studied by scanning electron microscopy, Raman spectroscopy, and capacitance-voltage characteristic measurements. A donor-depleted layer is detected within the porous film near its outer surface.

引用

页码：324 / 327

页数：4

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