Vertical-cavity surface-emitting lasers fabricated using a sealing of AlAs against wet oxidation

被引:0
|
作者
Lim, DH [1 ]
Yang, GM [1 ]
Kim, JH [1 ]
Lim, KY [1 ]
Lee, HJ [1 ]
机构
[1] Chonbuk Natl Univ, Semicond Phys Res Ctr, Chonju 561756, South Korea
来源
VERTICAL-CAVITY SURFACE-EMITTING LASERS II | 1998年 / 3286卷
关键词
VCSEL; oxidation; sealing; oxide surface barrier; current aperture;
D O I
10.1117/12.305450
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have studied the process of sealing an exposed AlAs and the wet oxidation behavior of AlAs to prevent further wet oxidation. A critical processing step consists of the formation of an oxide surface barrier by the first wet oxidation for a short time at 390 -430 degrees C in the steam environment of previously room-ambient exposed AlAs surface. During this brief wet oxidation, a dense oxide barrier with a thickness of similar to 1 mu m is formed, which further blocks diffusing oxygen species during the second wet oxidation. The oxide surface barriers of similar to 1 mu m thickness formed at 408 degrees C and 410 degrees C have shown the best effectiveness of sealing against further wet oxidation. The effectiveness of the sealing is demonstrated through its use as a mask against wet oxidation in the fabrication of oxide-confined vertical-cavity surface-emitting lasers.
引用
收藏
页码:96 / 102
页数:7
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