Jet vapor deposition nitride processing and application to advanced CMOS devices for reduction of gate leakage current and boron penetration

被引：0

作者：

Tseng, HH ^{[1
]}

Veteran, J

Tobin, PJ

Mogab, J

Tsui, PGY

Wang, V

Khare, M

Wang, XW

Ma, TP

Hobbs, C

Hegde, R

Hartig, M

Kenig, G

Blumenthal, R

Cotton, R

Kaushik, V

Tamagawa, T

Halpern, BL

Cui, GJ

Schmitt, JJ

机构：

[1] Motorola Inc, Adv Prod Res & Dev Lab, Austin, TX 78721 USA

[2] Yale Univ, New Haven, CT USA

[3] Jet Proc Corp, New Haven, CT USA

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2000年 / 3卷 / 03期

关键词：

gate leakage current; boron penetration; jet vapor deposition;

D O I：

10.1016/S1369-8001(99)00024-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The increase in gate leakage current and boron penetration are major problems for scaled gate dielectrics in advanced device technology. We have demonstrated, for the first time, reduction in gale leakage current and strong resistance to boron penetration when jet vapor deposition (JVD) nitride is used as a gate dielectric in an advanced CMOS process. JVD nitride provides a robust interface in addition to well behaved bulk properties, MOSFET characteristics and ring oscillator performance. Process optimization is discussed. Manufacturing issues remain to be addressed. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：173 / 178

页数：6