Room-temperature operation of GaInAsP lasers epitaxially grown on wafer-bonded InP/Si substrate

被引：21

作者：

Matsumoto, Keiichi ^{[1
]}

Kishikawa, Junya ^{[1
]}

Nishiyama, Tetsuo ^{[1
]}

Kanke, Tomokazu ^{[1
]}

Onuki, Yuya ^{[1
]}

Shimomura, Kazuhiko ^{[1
]}

机构：

[1] Sophia Univ, Dept Engn & Appl Sci, Chiyoda Ku, Tokyo 1028554, Japan

来源：

APPLIED PHYSICS EXPRESS | 2016年 / 9卷 / 06期

关键词：

SI; INTEGRATION; PHOTONICS; MOVPE; MQW;

D O I：

10.7567/APEX.9.062701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An epitaxially grown GaInAsP/InP double-hetero laser diode (LD) has been demonstrated on a wafer-bonded InP/Si substrate for the first time. The as-grown structure was optically active and exhibited a photoluminescence intensity comparable to that grown on an InP wafer as a reference. Electrodes were formed on both the p-side contact layer and the n-Si underside to fabricate Fabry-Perot LD chips. During these processes, the InP layer remained bonded to the underlying Si substrate. Electrically pumped lasing emission was observed at room temperature under a pulse regime. These results indicate the potential for the high-density integration of InP-based LDs as a light source for optical interconnections. (C) 2016 The Japan Society of Applied Physics

引用

页数：3

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