Brillouin zone and band structure of β-Ga2O3

被引:253
|
作者
Peelaers, Hartwin [1 ]
Van de Walle, Chris G. [1 ]
机构
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
来源
基金
美国国家科学基金会;
关键词
band gap; Brillouin zone; first-principles calculations; gallium oxide; monoclinic structures; BILBAO CRYSTALLOGRAPHIC SERVER; CRYSTAL; ABSORPTION; GROWTH; EDGE;
D O I
10.1002/pssb.201451551
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Gallium oxide is increasingly used in a variety of applications, but confusion reigns over the Brillouin zone and the band structure of monoclinic beta-Ga2O3. We present a detailed study of the shape of the Brillouin zone and the location of high-symmetry points. Combined with a study of electronic structure based on hybrid density functional theory, this allows us to derive an accurate band structure. We discuss the nature of the band gap and the location of the band extrema. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:828 / 832
页数:5
相关论文
共 50 条
  • [21] MOCVD Growth of β-Ga2O3 on (001) Ga2O3 Substrates
    Meng, Lingyu
    Yu, Dongsu
    Huang, Hsien-Lien
    Chae, Chris
    Hwang, Jinwoo
    Zhao, Hongping
    CRYSTAL GROWTH & DESIGN, 2024, 24 (09) : 3737 - 3745
  • [22] Twin-induced phase transition from β-Ga2O3 to α-Ga2O3 in Ga2O3 thin films
    Choi, Byeongdae
    Allabergenov, Bunyod
    Lyu, Hong-Kun
    Lee, Seong Eui
    APPLIED PHYSICS EXPRESS, 2018, 11 (06)
  • [23] Sub-band-gap absorption in Ga2O3
    Peelaers, Hartwin
    Van de Walle, Chris G.
    APPLIED PHYSICS LETTERS, 2017, 111 (18)
  • [24] Two-dimensional nitrides extend the β-Ga2O3 application by controlling the band levels in β-Ga2O3 based heterostructure
    Yuan, Haidong
    Su, Jie
    Lin, Zhenhua
    Lv, Yuanjie
    Zhang, Jincheng
    Zhang, Jie
    Chang, Jingjing
    Hao, Yue
    MATERIALS TODAY PHYSICS, 2023, 30
  • [25] Unravelling the surface structure of β-Ga2O3 (100)
    Kilian, Alex Sandre
    de Siervo, Abner
    Landers, Richard
    Abreu, Guilherme Jean P.
    Castro, Mayron S.
    Back, Tyson
    Pancotti, Alexandre
    RSC ADVANCES, 2023, 13 (40) : 28042 - 28050
  • [26] Influence of Polymorphism on the Electronic Structure of Ga2O3
    Swallow, Jack E. N.
    Vorwerk, Christian
    Mazzolini, Piero
    Vogt, Patrick
    Bierwagen, Oliver
    Karg, Alexander
    Eickhoff, Martin
    Schoermann, Joerg
    Wagner, Markus R.
    Roberts, Joseph W.
    Chalker, Paul R.
    Smiles, Matthew J.
    Murgatroyd, Philip
    Razek, Sara A.
    Lebens-Higgins, Zachary W.
    Piper, Louis F. J.
    Jones, Leanne A. H.
    Thakur, Pardeep K.
    Lee, Tien-Lin
    Varley, Joel B.
    Furthmueller, Juergen
    Draxl, Claudia
    Veal, Tim D.
    Regoutz, Anna
    CHEMISTRY OF MATERIALS, 2020, 32 (19) : 8460 - 8470
  • [27] Band offsets at the interfaces between β-Ga2O3 and Al2O3
    Lyu, Sai
    PHYSICAL REVIEW MATERIALS, 2023, 7 (01)
  • [28] A comparative study of Ir/Ga2O3, Pt/Ga2O3, and Ru/Ga2O3 catalysts in selective hydrogenation of crotonaldehyde
    Gebauer-Henke, E.
    Farbotko, J.
    Touroude, R.
    Rynkowski, J.
    KINETICS AND CATALYSIS, 2008, 49 (04) : 574 - 580
  • [29] Surface chemistry and pore structure of β-Ga2O3
    Delgado, MR
    Areán, CO
    MATERIALS LETTERS, 2003, 57 (15) : 2292 - 2297
  • [30] Structure engineering of Ga2O3 photodetectors: a review
    Wu, Wentao
    Huang, Hong
    Wang, Yilin
    Yin, Haoran
    Han, Keju
    Zhao, Xiaolong
    Feng, Xiao
    Zeng, Yan
    Zou, Yanni
    Hou, Xiaohu
    Wei, Zhongming
    Long, Shibing
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2025, 58 (06)